Abstract: A pixel for an ambient light and/or color sensor includes a plurality of pinned photodiodes. The pixel also includes a floating diffusion region. A ratio of an active area of the plurality of pinned photodiodes to an area of the floating diffusion region is greater than 150.

Abstract: A circuit for sensing radiation with high sensitivity is disclosed. The circuit comprises a first transistor configurable to reset a voltage-level at a circuit node to a voltage reference. The circuit also comprises measurement circuitry configured to measure the voltage-level at the circuit node, and at least one photodiode configured to vary the voltage-level at the circuit node in response to radiation incident upon the photodiode during an integration period. The circuit also comprises processing circuitry configured to control the first transistor to reset the voltage-level at the circuit node and to subsequently configure the measurement circuitry to measure the voltage-level at a start and at an end of the integration period.