Abstract: The disclosure provides a structure and method for a memory element to confine a metal (e.g., a remaining portion of a metallic residue) with a spacer. A structure according to the disclosure includes a memory element over a first portion of an insulator layer. A portion of the memory element includes a sidewall over the insulator layer. A spacer is adjacent the sidewall of the memory element and on the first portion of the insulator layer. A metal-dielectric layer is within an interface between the spacer and the sidewall or an interface between the spacer and the first portion of the insulator layer. The insulator layer includes a second portion adjacent the first portion, and the second portion does not include the memory element, the spacer, and the metal-dielectric layer thereon.

Abstract: A reflective semiconductor device includes an integrated circuit (IC) structure, and a pair of mirror elements over the IC structure. The pair of mirror elements are separated by a trench. Each mirror element includes a mirror layer of, for example, aluminum, on the IC structure, and a low temperature oxide (LTO) layer on the mirror layer. A high temperature oxide (HTO) layer is over the pair of mirror elements and fills the trench. A liquid crystal layer over the mirror elements provides a liquid crystal on semiconductor (LCOS) device. The two-oxide layer prevents mirror layer creep and/or agglomeration during formation of the HTO layer and provide a suitable surface for LCOS assembly without using specialized alloys.