Abstract: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps and other structures at a high deposition rate pursuant to manufacturing a microelectronic device from a workpiece, such as a semiconductor wafer. An apparatus for plating solder on a microelectronic workpiece in accordance with one aspect of the present invention comprises a reactor chamber containing an electroplating solution having free ions of tin and lead for plating onto the workpiece. A chemical delivery system is used to deliver the electroplating solution to the reactor chamber at a high flow rate. A workpiece support is used that includes a contact assembly for providing electroplating power to a surface at a side of the workpiece that is to be plated. The contact contacts the workpiece at a large plurality of discrete contact points that isolated from exposure to the electroplating solution.

Abstract: An apparatus for use in processing a workpiece to fabricate a microelectronic component is set forth. The apparatus comprises a process container having a process fluid therein for processing the workpiece and a workpiece holder configured to hold the workpiece. A position sensor is employed to provide position information indicative of the spacing between a surface of the workpiece and a surface of the process fluid. A drive system provides relative movement between the surface of the workpiece and the surface of the process fluid in response to the position information. Preferably, the relative movement provided by the drive system comprises a first motion that causes the surface of the workpiece to contact the surface of the process fluid, and a second motion opposite the direction all of and following the first to generate and maintain a column of process fluid between the surface of the process fluid and the surface of the workpiece.

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path.

Abstract: An apparatus for electroplating a workpiece is disclosed in which the apparatus includes a workpiece holding structure. The workpiece holding structure includes a workpiece support having at least one surface that is disposed to engage a front side of the workpiece and at least one electrical contact disposed for contact with at least one corresponding electrical contact on a back-side of the workpiece. The workpiece includes one or more electrically conductive paths between the at least one corresponding electrical contact and a front-side of the workpiece to facilitate electroplating of the front-side surface.

Abstract: Methods used in semiconductor electroplating systems, such as for plating copper, onto a semiconductor wafer or other semiconductor workpiece. The methods apply to patterned metal layers plated onto seed layer which is partially protected by an overlying photoresist or other coating. The methods employ an electrode assembly which has a boot which seals about a contact face of the electrode. The sealing is performed by engaging the seal against photoresist to prevent corrosion of the seal layer. The area enclosed by the sealing includes a via which is surrounded by the seal. The electrode contact extends through the via to provide electrical contact with the metallic seed layer. Plating of copper or other metal proceeds at exposed seed layer areas.

Abstract: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps and other structures at a high deposition rate pursuant to manufacturing a microelectronic device from a workpiece, such as a semiconductor wafer. An apparatus for plating solder on a microelectronic workpiece in accordance with one aspect of the present invention comprises a reactor chamber containing an electroplating solution having free ions of tin and lead for plating onto the workpiece. A chemical delivery system is used to deliver the electroplating solution to the reactor chamber at a high flow rate. A workpiece support is used that includes a contact assembly for providing electroplating power to a surface at a side of the workpiece that is to be plated. The contact contacts the workpiece at a large plurality of discrete contact points that isolated from exposure to the electroplating solution.

Abstract: The present invention provides semiconductor workpiece processors and methods of wetting and processing a semiconductor workpiece. One method of wetting and processing a semiconductor workpiece with process fluid comprises providing a semiconductor workpiece having a surface; providing a process fluid; contacting the surface of the semiconductor workpiece with the process fluid; and raising the semiconductor workpiece relative to the process fluid following the contacting.

Abstract: Methods used in semiconductor electroplating systems, such as for plating copper, onto a semiconductor wafer or other semiconductor workpiece. The methods apply to patterned metal layers plated onto a seed layer which is partially protected by an overlying photoresist or other coating. The methods employ an electrode assembly which has a boot which seals about a contact face of the electrode. The sealing is performed by engaging the seal against photoresist to prevent corrosion of the seal layer. The area enclosed by the sealing includes a via which is surrounded by the seal. The electrode contact extends through the via to provide electrical contact with the metallic seed layer. Plating of copper or other metal proceeds at exposed seed layer areas.