Abstract: A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the Schottly diodes and transistor do not need to be isolated from one another, resulting in a very compact logic gate. The logic gate forms a portion of a NAND function in one embodiment. One or more Schottky diodes between the collector and base of the bipolar transistor act as a clamp to prevent the transistor from saturating. The clamp diodes can also be used to adjust the output voltage of the gate to ensure downstream transistors can be fully turned off.

Abstract: In a transistor logic output device the improvement comprising an active element discharging transistor coupled between the base of the pulldown element transistor and ground or low potential for actively controlling a route to ground or low potential for diverting and discharging so-called capacitive feedback Miller current generated during the low to high voltage transition at the output of the device resulting from base-collector junction capacitance in the pulldown element transistor. The invention includes capacitive coupling means coupled at the base of the active element discharging transistor to follow changes in voltage at the device output and capacitively feed back current during transistion from low to high potential at the device output for driving the base of the discharge transistor thereby providing a low impedance path to ground or low potential at the base of the pulldown element transistor for diverting and discharging capacitive Miller feedback current.