Abstract: A hand-held, fleet deployable infrared camera with integrated hardware and software providing real time processing of infrared images. The camera senses variable temperature images over a selected object of interest and senses variable emissivities over the object. The camera also measures and corrects for reflected environmental radiation as well as corrections for the atmospheric path through which the object is viewed. A calibrated reference patch having known emissivity and reflectance is attached to an object of interest and viewed through the camera. The calibrated patch is used to provide correction for the environmental radiation reflected off the object. Once the environmental radiation correction is known, it can be used to correct measurements taken from the rest of the object of interest.

Abstract: A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX.sub.3, with tertiarybutyl Grignard reagent, ((CH.sub.3).sub.3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH.sub.3).sub.2 to form a reaction mixture; and (3) recovering ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P from the reaction mixture.

Abstract: A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.

Abstract: Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.

Abstract: Triisopropylindium diisopropyltelluride adduct, ((CH.sub.3).sub.2 CH).sub.3 In:Te(CH(CH.sub.3).sub.2).sub.2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10.sup.14 cm.sup.-3 and does not exhibit an appreciable memory effect.

Abstract: Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH.sub.3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.

Abstract: The new compound tertiarybutyldimethylantimony is prepared by reacting an timony trihalide SbX.sub.3 with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX, treating the resulting product with the methyl Grignard reagent (CH.sub.3)MgX. where X is a halide, and recovering tertiarybutyldimethylantimony from the reaction mixture. The reaction is preferably carried out by a one pot synthesis in a suitable solvent such as diethyl either using approximately one equivalent of ((CH.sub.3).sub.3 C)MgX in relation to the SbX.sub.3 at about -50.degree. C., followed by treatment with approximately two equivalents of (CH.sub.3)MgX in relation to the SbX.sub.3 at about 0.degree. C. The tertiarybutyldimethylantimony is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.

Abstract: Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.

Abstract: Compounds and process for preparation and isolation of tetraorganyl tellum compounds including: tetraalkyl tellurium and tetraalkenyl tellurium. The products remain relatively stable in the absence of light and air.

Abstract: Compounds and process for preparation and isolation of tetraorganyl tellurium compounds including: tetraalkyl tellurium and tetraalkenyl tellurium. The products remain relatively stable in the absence of light and air.