Abstract: The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of such coated crystals. The method includes the steps of providing an uncoated metal fluoride crystal of general formula MF2, where M is beryllium, magnesium, calcium, strontium and barium, and mixtures thereof, and coating the uncoated metal fluoride crystal with a coating of a selected material to thereby form a coated metal material resistant to laser induced damage. Preferred coating materials include MgF2, MgF2 doped fused silica and fluorine doped fused silica.

Abstract: The invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include barium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include barium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Abstract: The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of calcium strontium cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals, optical element blanks thereof and optical lithography elements.

Abstract: The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of such coated crystals. The method includes the steps of providing an uncoated metal fluoride crystal of general formula MF2, where M is beryllium, magnesium, calcium, strontium and barium, and mixtures thereof, and coating the uncoated metal fluoride crystal with a coating of a selected material to thereby form a coated metal material resistant to laser induced damage. Preferred coating materials include MgF2, MgF2 doped fused silica and fluorine doped fused silica.

Abstract: The invention provides a ≧4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include magnesium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Abstract: The present invention provides below 160 nm optical lithography crystal materials for VUV optical lithography systems and processes. The invention provides fluoride optical lithography crystals for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The present invention provides methods of making below 160 nm optical lithography crystal materials for below 160 nm VUV optical lithography systems and processes.

Abstract: The invention provides a UV below 200 nm lithography method. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of alkaline earth cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the cubic fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals and forming optical element therefrom.

Abstract: The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include magnesium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Abstract: The present invention provides fluoride lens crystals for VUV optical lithography systems and processes. The invention provides a barium fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The invention includes a barium fluoride crystalline material for use in dispersion management of below 160 nm optical lithography processes.

Abstract: The invention provides a ≧4 kHz repetition rate fluoride excimer laser system for producing an UV wavelength <200 nm, and in particular an argon fluoride excimer laser system for producing a UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber also includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light at a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of calcium strontium cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals, optical element blanks thereof and optical lithography elements.

Abstract: The present invention provides below 160 nm optical lithography crystal materials for VUV optical lithography systems and processes. The invention provides fluoride optical lithography crystals for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The present invention provides methods of making below 160 nm optical lithography crystal materials for below 160 nm VUV optical lithography systems and processes.

Abstract: The present invention provides fluoride lens material crystals for VUV optical lithography systems and processes. The invention provides a fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons.

Abstract: The invention provides a UV below 200 mm lithography method. The invention includes providing a below 200 mm radiation source for producing <200-nm light, providing a plurality of mixed cubic flouride crystal optical elements, with the fluoride crystals comprised of a combination of alkaline earth cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the litographic patter and projecting the lithography pattern with the cubic fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals and forming optical element thereform.

Abstract: The invention provides a method of making ≧4 kHz repetition rate argon fluoride excimer laser crystal optics. The method includes providing a magnesium fluoride crystal solid precursor, nonmetallically crushing the magnesium fluoride solid precursor to provide a crushed low metal contaminant magnesium fluoride feedstock, providing a magnesium fluoride crystal growth crucible, loading the crushed magnesium fluoride feedstock into the crystal growth crucible, melting the loaded crushed magnesium fluoride feedstock to provide a precrystalline magnesium fluoride melt, growing an oriented magnesium fluoride crystal from the precrystalline magnesium fluoride melt, cooling the grown magnesium fluoride crystal to provide a magnesium fluoride laser optical crystal and forming the magnesium fluoride laser crystal into an excimer laser crystal optic for transmitting a high repetition rate (≧4 kHz repetition rate) excimer laser output.

Abstract: The invention provides a ≧4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: The invention relates to an High Repetition Rate UV Excimer Laser which includes a source of a laser beam and one or more windows which include magnesium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include magnesium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Abstract: The invention relates to an excimer laser which includes a source of a laser beam and one or more windows which include barium fluoride. Another aspect of the invention relates to an excimer laser which includes a source of a laser beam, one or more windows which include barium fluoride and a source for annealing the one or more windows. Another aspect of the invention relates to a method of producing a predetermined narrow width laser beam.

Abstract: The present invention provides fluoride lens crystals for VUV optical lithography systems and processes. The invention provides a barium fluoride optical lithography crystal for utilization in 157 nm optical microlithography elements which manipulate below 193 nm optical lithography photons. The invention includes a barium fluoride crystalline material for use in dispersion management of below 160 nm optical lithography processes.