Abstract: Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional mi

Abstract: Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional mi

Abstract: A method for carrying out pulsed laser deposition is disclosed. The method comprises providing a target having a desired composition; irradiating the target with a pulsed laser beam to provide a plume of target material; and directing the plume in a desired direction by use of an inert carrier gas. The plume of target material is passed through an aperture to create an atomic beam. One or both of the plume or the atomic beam is irradiated to reduce the amount of agglomerated particles in the atomic beam. The atomic beam is directed onto a substrate to produce a deposition product. An apparatus for carrying out the method is also disclosed.

Abstract: A circuit for suppressing electrical arcing in an ion beam source or other plasma devices is provided. The arc suppression circuit of this invention detects current rises on ion beam source grids which cause arcing, disconnects the current flowing to the grid, and grounds the ion beam source to allow excess charge and current to be drained from the ion beam source rather than letting the charge and current arc on the grids of the ion beam source. A novel timing sequence is used for activating and deactivating the arc suppression circuitry to prevent shorting out of the power source. The arc suppressor circuits of this invention can be used on devices other than ion beam sources or plasma devices.

Abstract: Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly rotated to a selected deposition position, paused in the deposition position for ionized material to be deposited, then quickly rotated to the next selected deposition position. The clocking motion can be achieved by use of a lobed cam on the spindle with which the substrate is rotated or by stopping and starting a stepper motor at long and short intervals. Other symmetries can be programmed into the process, allowing virtually any oriented inorganic crystal to be grown on the substrate surface.

Abstract: A method and an apparatus for forming a charge neutral ion beam which is useful in producing thin films of material on electrically conductive or non-conductive substrates are provided.