Patents by Inventor Robert W. Stoll

Robert W. Stoll has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Active area planarization with self-aligned contacts
    Patent number: 4849377
    Abstract: Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: July 18, 1989
    Assignee: General Electric Company
    Inventors: Manjin J. Kim, Bruce F. Griffing, Ronald H. Wilson, Arlene G. Williams, Robert W. Stoll
  • Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
    Patent number: 4741928
    Abstract: A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.
    Type: Grant
    Filed: April 10, 1987
    Date of Patent: May 3, 1988
    Assignee: General Electric Company
    Inventors: Ronald H. Wilson, Robert W. Stoll, Herbert R. Philipp
  • Selective chemical vapor deposition apparatus
    Patent number: 4653428
    Abstract: An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.
    Type: Grant
    Filed: May 10, 1985
    Date of Patent: March 31, 1987
    Assignee: General Electric Company
    Inventors: Ronald H. Wilson, Robert W. Stoll, Michael A. Calacone
  • Method for treating fumed silica
    Patent number: 4554147
    Abstract: A method for treating fumed silica in a continuous manner is provided by effecting contact between the fumed silica, while in a fluidized state, with a methyl substituted chlorosilane, hydrochloric acid and a surfactant.
    Type: Grant
    Filed: April 2, 1984
    Date of Patent: November 19, 1985
    Assignee: General Electric Company
    Inventors: Robert W. Stoll, Michael R. MacLaury
  • Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
    Patent number: 4552783
    Abstract: A method is provided for selectively depositing tungsten metal at thicknesses over 1000 angstroms or more on silicon and other conductor and semiconductor surfaces, wherein a substrate containing such surfaces is exposed to a chlorine or bromine containing solution to prevent deposition of tungsten on the insulator surfaces.
    Type: Grant
    Filed: November 5, 1984
    Date of Patent: November 12, 1985
    Assignee: General Electric Company
    Inventors: Robert W. Stoll, Michael R. MacLaury, Ronald H. Wilson