Abstract: In an embodiment, a method for producing a substrate having a structured surface includes providing the substrate having a substrate body and having a surface to be structured, forming an absorption layer, a first mask layer and a second mask layer on the surface to be structured, forming openings in the second mask layer in which the first mask layer is exposed, exposing the surface to be structured in a region of the openings, forming depressions in the surface to be structured in the region of the openings to form the structured surface of the substrate and removing the absorption layer from the substrate.

Abstract: Disclosed is a search system and associated methods for proactively searching disparate data sources in order to track in real-time the continuously changing attributes that are searchable and to generate personalized search results for different users based on machine-generated queries of relevant searchable attributes to each user without user-defined queries or user-initiated searches. The search system continuously searches the data sources for changes to a first set of searchable attributes with relevance to a first user and to a second set of searchable attributes to a second user. The search system generates and performs a first customized query of the first set of attributes identified with the changes and a second customized query of the second set of attributes identified with the changes, and provides the personalized search results from each query to the respective user in response to detecting that respective user accessing the search system.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: In an embodiment, a method for producing a substrate having a structured surface includes providing the substrate having a substrate body and having a surface to be structured, forming an absorption layer, a first mask layer and a second mask layer on the surface to be structured, forming openings in the second mask layer in which the first mask layer is exposed, exposing the surface to be structured in a region of the openings, forming depressions in the surface to be structured in the region of the openings to form the structured surface of the substrate and removing the absorption layer from the substrate.

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Abstract: The invention relates to a method for operating an internal combustion engine installed in a vehicle, in particular a diesel engine, in which the instantaneous concentration of a pollutant contained in the exhaust gas, in particular the NOx concentration in the exhaust gas, is measured or calculated in the flow direction after an exhaust gas aftertreatment. Using the determined pollutant concentration, the predefined distance- and/or power-based compliance with pollutant limiting values in mg/km or mg/kWh are monitored by means of specifically influencing the operating parameters of the internal combustion engine and/or an exhaust gas after treatment system in regulated form.

Abstract: Embodiments provide techniques, including systems and methods, for processing imaging data to identify an installed component. Embodiments include a component identification system that is configured to receive imaging data including an installed component, extract features of the installed component from the imaging data, and search a data store of components for matching reference components that match those features. A relevance score may be determined for each of the reference components based on a similarity between the image and a plurality of reference images in a component model of each of the plurality of reference components. At least one matching reference component may be identified by comparing each relevance score to a threshold relevance score and matching component information may be provided to an end-user for each matching reference component.

Abstract: The invention relates to a method for operating an internal combustion engine installed in a vehicle, in particular a diesel engine, in which the instantaneous concentration of a pollutant contained in the exhaust gas, in particular the NOx concentration in the exhaust gas, is measured or calculated in the flow direction after an exhaust gas aftertreatment. Using the determined pollutant concentration, the predefined distance- and/or power-based compliance with pollutant limiting values in mg/km or mg/kWh are monitored by means of specifically influencing the operating parameters of the internal combustion engine and/or an exhaust gas after treatment system in regulated form.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: Embodiments provide techniques, including systems and methods, for processing imaging data to identify an installed component. Embodiments include a component identification system that is configured to receive imaging data including an installed component, extract features of the installed component from the imaging data, and search a data store of components for matching reference components that match those features. A relevance score may be determined for each of the reference components based on a similarity between the image and a plurality of reference images in a component model of each of the plurality of reference components. At least one matching reference component may be identified by comparing each relevance score to a threshold relevance score and matching component information may be provided to an end-user for each matching reference component.

Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.