Abstract: A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.

Abstract: Lithographic patterning method for creating features on a surface of a substrate, including the steps of: applying a resist material to the surface; performing resist processing steps, including at least: selectively exposing the resist material layer to a surface treatment step, wherein the resist material in the exposed locations is chemically modified; and developing the resist material layer to selectively remove the resist material locally. The method further comprises detecting, during or after the resist processing steps, a chemical modification of the resist material for monitoring or evaluating the processing steps. The step of detecting is performed by scanning the surface using a scanning probe microscopy device, and wherein the scanning includes contacting the surface with the probe tip in a probing area. The probing area coincides with at least one location of the exposed locations and non-exposed locations, for detecting the chemical modification. The document further describes a system.

Abstract: A lithographic projection apparatus including an illumination system; a support structure for holding a mask; a substrate table for holding a substrate; a projection system for projecting a pattern onto a target portion of the substrate; and an interferometric measurement system for measuring wave front aberrations of the projection system, characterized in that the interferometric measurement system including: a grating, featuring a grating pattern in a grating plane, said grating being movable into and out of the projection beam, such that the grating plane is substantially coincident with said object plane; a pinhole, featuring a pinhole pattern in a pinhole plane and arranged in a pinhole plate, said pinhole being movable into and out of the projection beam, such that the pinhole plane is substantially coincident with a plane downstream of the projection system and optically conjugate to said object plane, and a detector with a detector surface substantially coincident with a detection plane, said detecti

Abstract: A lithographic projection apparatus comprising an illumination system; a support structure for holding a mask; a substrate table for holding a substrate; a projection system for projecting a pattern onto a target portion of the substrate; and an interferometric measurement system for measuring wave front aberrations of the projection system, characterized in that the interferometric measurement system comprises: a grating, featuring a grating pattern in a grating plane, said grating being movable into and out of the projection beam, such that the grating plane is substantially coincident with said object plane; a pinhole, featuring a pinhole pattern in a pinhole plane and arranged in a pinhole plate, said pinhole being movable into and out of the projection beam, such that the pinhole plane is substantially coincident with a plane downstream of the projection system and optically conjugate to said object plane, and a detector with a detector surface substantially coincident with a detection plane, said detect