Patents by Inventor Robert William Bechdolt

Robert William Bechdolt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
    Patent number: 6913981
    Abstract: Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielectric isolation layer overlying the base layer, and an emitter structure overlying the dielectric isolation layer and contacting the base layer through a central aperture in the dielectric layer. The transistor may be a heterojunction bipolar transistor with the base layer formed of a selectively grown silicon germanium alloy. A dielectric spacer may be formed adjacent the emitter structure and over a portion of the base layer.
    Type: Grant
    Filed: May 19, 2003
    Date of Patent: July 5, 2005
    Assignee: Micrel, Incorporated
    Inventors: Jay Albert Shideler, Jayasimha Swamy Prasad, Ronald Lloyd Schlupp, Robert William Bechdolt
  • Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
    Publication number: 20040043576
    Abstract: Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielectric isolation layer overlying the base layer, and an emitter structure overlying the dielectric isolation layer and contacting the base layer through a central aperture in the dielectric layer. The transistor may be a heterojunction bipolar transistor with the base layer formed of a selectively grown silicon germanium alloy. A dielectric spacer may be formed adjacent the emitter structure and over a portion of the base layer.
    Type: Application
    Filed: May 19, 2003
    Publication date: March 4, 2004
    Applicant: Micrel, Incorporated
    Inventors: Jay Albert Shideler, Jayasimha Swamy Prasad, Ronald Lloyd Schlupp, Robert William Bechdolt
  • Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
    Patent number: 6699765
    Abstract: Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer, a dielectric isolation layer overlying the base layer, and an emitter structure overlying the dielectric isolation layer and contacting the base layer through a central aperture in the dielectric layer. The transistor may be a heterojunction bipolar transistor with the base layer formed of a selectively grown silicon germanium alloy. A dielectric spacer may be formed adjacent the emitter structure and over a portion of the base layer.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: March 2, 2004
    Assignee: Micrel, Inc.
    Inventors: Jay Albert Shideler, Jayasimha Swamy Prasad, Ronald Lloyd Schlupp, Robert William Bechdolt