Abstract: A method is provided for processing a substrate. The method includes receiving a substrate on a substrate holder in a processing chamber. The substrate has a major surface and a mask layer disposed over the major surface, where the mask layer includes a feature. A first angle is formed between a processing beam and a normal direction of the major surface. The mask layer is exposed to the processing beam at the first angle using a first set of process parameters. A second angle is formed between the processing beam and the normal direction of the major surface, where the first angle is different from the second angle. The mask layer is exposed to the processing beam at the second angle using a second set of process parameters.

Abstract: A method is provided for processing a substrate to correct overlay misalignment between patterned layers. The method includes measuring an overlay misalignment between a feature of a first patterned layer and an opening of a second patterned layer that is disposed over the first patterned layer. Based on the measured overlay misalignment, the method performs a location specific directional etching process to extend a first dimension of the opening in a first direction. The method also performs a location specific deposition process to reduce a second dimension of the opening in a second direction different from the first direction. The location specific directional etching process and location specific deposition process work together to reduce the overlay misalignment.

Abstract: A method for processing a substrate includes receiving the substrate including a patterned mask disposed over a layer stack including a second layer disposed over a first layer, the patterned mask including a feature pattern, and etching the substrate to transfer the feature pattern to the second layer and form first openings that expose the first layer. The method further includes exposing a first sidewall of the first openings to a first focused beam at a first processing angle to extend the first openings in a first direction and form second openings, and etching the substrate to transfer the second openings through the first layer and form third openings. And the method further includes exposing the first sidewall of the third openings to a second focused beam at a second processing angle to form fourth openings.

Abstract: A method for integrated circuit (IC) fabrication, where the method includes providing a substrate including a first patterned layer and a second patterned layer, where the second patterned layer is aligned to the first patterned layer; measuring an overlay error of the second patterned layer with the first patterned layer across the substrate; based on the measuring, obtaining the overlay error of the second patterned layer with the first patterned layer; and exposing the second patterned layer to a first flux from a first location specific directional process to correct the overlay error.