Abstract: A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.

Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: An all in the head surface cleaning apparatus includes a surface cleaning head having a lower surface having a dirty air inlet. The surface cleaning head may include a brush motor drivingly connected to a movable brushing member having a brush motor axis. The surface cleaning head may include a cyclone comprising a cyclone chamber having a longitudinal cyclone axis. The surface cleaning head may include a suction motor having a first end, a second end and a suction motor axis extending between the first and second ends. The surface cleaning head may include a bleed valve having an inlet end, an outlet end and a body extending between the inlet and outlet ends. The body may have a bleed valve axis. The bleed valve axis may be generally parallel to at least one of the cyclone chamber axis, the suction motor axis and the brush motor axis.

Abstract: An all in the head surface cleaning apparatus may have a surface cleaning head including a front end, a rear end, first and second laterally opposed sidewalls. The surface cleaning head may include a cyclone assembly comprising a cyclone chamber and a dirt collection chamber. The cyclone chamber may have a longitudinal cyclone axis, a cyclone assembly air inlet port and a cyclone assembly air outlet port. The cyclone assembly may be moveable from a cleaning position to a cyclone assembly removal position. The surface cleaning head may include a biasing member biasing the cyclone assembly away from the cleaning position, and a suction motor having a suction motor air inlet and a suction motor axis. The apparatus may include an upper portion moveably mounted to the surface cleaning head between a storage position and a floor cleaning position, the upper portion comprising a drive handle.

Abstract: A surface cleaning head has a cyclone assembly with a cyclone assembly air inlet port and a cyclone assembly air outlet port, a first air flow path extending from a dirty air inlet to the cyclone assembly air inlet port, and a second air flow path extending from the cyclone assembly air outlet port to a suction motor air inlet. The cyclone assembly moveable from a cleaning position in which the cyclone assembly air inlet port is in communication with an outlet port of the first air flow path and cyclone assembly air outlet port is in communication with an inlet port of the second air flow path to a removal position in which the cyclone assembly air inlet port is spaced from the outlet port of the first air flow path and cyclone assembly air outlet port is spaced from the inlet port of the second air flow path.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.

Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.

Abstract: A surface cleaning head has a cyclone assembly with a cyclone assembly air inlet port and a cyclone assembly air outlet port, a first air flow path extending from a dirty air inlet to the cyclone assembly air inlet port, and a second air flow path extending from the cyclone assembly air outlet port to a suction motor air inlet. The cyclone assembly moveable from a cleaning position in which the cyclone assembly air inlet port is in communication with an outlet port of the first air flow path and cyclone assembly air outlet port is in communication with an inlet port of the second air flow path to a removal position in which the cyclone assembly air inlet port is spaced from the outlet port of the first air flow path and cyclone assembly air outlet port is spaced from the inlet port of the second air flow path.

Abstract: An all in the head surface cleaning apparatus includes a surface cleaning head having a lower surface having a dirty air inlet. The surface cleaning head may include a brush motor drivingly connected to a movable brushing member having a brush motor axis. The surface cleaning head may include a cyclone comprising a cyclone chamber having a longitudinal cyclone axis. The surface cleaning head may include a suction motor having a first end, a second end and a suction motor axis extending between the first and second ends. The surface cleaning head may include a bleed valve having an inlet end, an outlet end and a body extending between the inlet and outlet ends. The body may have a bleed valve axis. The bleed valve axis may be generally parallel to at least one of the cyclone chamber axis, the suction motor axis and the brush motor axis.

Abstract: An all in the head surface cleaning apparatus may have a surface cleaning head including a front end, a rear end, first and second laterally opposed sidewalls. The surface cleaning head may include a cyclone assembly comprising a cyclone chamber and a dirt collection chamber. The cyclone chamber may have a longitudinal cyclone axis, a cyclone assembly air inlet port and a cyclone assembly air outlet port. The cyclone assembly may be moveable from a cleaning position to a cyclone assembly removal position. The surface cleaning head may include a biasing member biasing the cyclone assembly away from the cleaning position, and a suction motor having a suction motor air inlet and a suction motor axis. The apparatus may include an upper portion moveably mounted to the surface cleaning head between a storage position and a floor cleaning position, the upper portion comprising a drive handle.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.

Abstract: Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.

Abstract: Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.

Abstract: Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.

Abstract: In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.