Abstract: Systems and processes for the treatment of a naphtha range hydrocarbon feedstock comprising sulfur-containing compounds, nitrogen-containing compounds, olefins, diolefins, and aromatics. The systems and processes are configured to treat the naphtha range hydrocarbon feedstock to convert the sulfur-containing compounds, nitrogen-containing compounds, and olefins, diolefins while less than 2 wt % aromatics are hydrogenated, producing an olefin lean overheads fraction comprising less than 0.2 wt % olefins and less than 100 mg/kg sulfur and an aromatics rich fraction comprising less than 50 ppmw olefins, less than 0.5 ppmw sulfur and less than 0.5 ppmw nitrogen.

Abstract: A light-emitting diode display including a substrate having a driving circuitry and a plurality of light emitting diode structures disposed on the substrate. Each light-emitting diode structure has a light emitting diode with a light emission zone having a planar portion, and a pigmentless light extraction layer of a UV-cured ink disposed over the light-emitting diode. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion, and the index of refraction of the light extraction layer decreases with distance from the planar portion.

Abstract: Provided herein are genetic markers and a coding sequence associated with a low- or ultra-low anatabine trait in tobacco.

Abstract: A composition for electroless plating comprises: from 9 to 29 weight percent, 9.7 to 29 weight percent, or 10 to 29 weight percent, of a first graft rubber copolymer which comprises the polymerized form of at least one conjugated diene monomer and at least one monovinyl aromatic monomer, from 70 to 90 weight percent, preferably 70-89.7 weight percent, more preferably 70 to 85 weight percent, of ungrafted styrenic polymer, from 0.1 to 10 weight percent of a core/shell diene-based rubber having particle size of 100 to 500 nanometers (nm), one or more of a stabilizer and/or antioxidant in total amount of from 0.1 to 5 weight percent, a fatty acid or a salt of fatty acid in an amount of from 0.1 to 2 weight percent, 0 to 5 weight percent of a mold release agent, 0 to 1 weight percent of a metal oxide, 0 to 3 weight percent of a lubricant, and 0 to 20 weight percent of polycarbonate wherein weight percent and ppm are based on total weight of the composition.

Abstract: A data dictionary generation system automatically populates and updates a data dictionary for listings offering shared data. A data dictionary includes metadata describing the shared data, including the individual objects, such as the individual tables, schemas, views, and functions. The shared data and each individual data object may be described in the data dictionary by a set of data fields that corresponds to the shared dataset or the object type of the individual object. The data dictionary can be presented to data consumers along with the description of the listing to provide data consumers with a comprehensive description of the shared data provided by a listing, including a high-level summary of the shared data and description of each individual object included in the shared data. The data dictionary allows data consumers to understand the contents of the shared data and how to use the shared data.

Abstract: A method and system to signal transmission layers or dedicated reference signal ports to be used in a multiple input multiple output system, the method including providing a downlink control signal containing information for transmission layers or dedicated reference signal ports utilized, the dedicated reference signal ports being associated with the transmission layers; and using the information to demodulate data on each transmission layer.

Abstract: A hybrid solid-state electrolyte layer for use in an electrochemical cell is provided. The hybrid solid-state electrolyte layer includes a polymeric material, a ceramic material, and an interfacial material adhering the polymeric material and the ceramic material. The interfacial material includes a branched copolymer that includes dopamine and a second monomer. The second monomer forms a polymeric moiety in the copolymer that is the same or similar to the polymeric material. In certain variations, the polymeric material defines a polymeric layer, the ceramic material defines a ceramic layer, and the interfacial material defines an interfacial layer that is disposed between the polymeric layer and the ceramic layer. In other variations, the polymeric material defines a polymeric matrix, the ceramic material defines a plurality of ceramic particles dispersed in the polymeric matrix, and the plurality of ceramic particles are coated with the interfacial material.

Abstract: Examples of detecting whether a device meets an enrollment level are disclosed. In one case, a method for providing access to an application on a client device includes receiving a request to access an application from the client device, determining an enrollment level associated with the application, and determining that multi-factor authentication is required for access to the application on the client device based on the enrollment level associated with the application. The method can also include initiating multi-factor authentication on the client device before access to the application is permitted. The method can also include determining that multi-factor authentication is successful on the client device, transmitting a management component to the client device, and installing the management component on the client device for enrollment as a managed device with a management service.

Abstract: The present disclosure provides acyltransferases useful for synthesizing therapeutically important statin compound.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: Provided are three dimensional, stretchable, optical sensor networks that can localize deformations. The devices described herein are suitable for uses in soft robots to determine the position of external contact, such as touching, and possibly internal deformations that may be caused by actuation. Sensor networks of the present disclosure contain a substrate, such as a 3D lattice, and cores having a cladding, such as air. Light passes through the cores and upon deformation of the substrate, cores may come into contact, allowing light to couple between cores due to frustrated total internal reflection. The resulting changes in intensity in the cores can be used to determine the placement and magnitude of deformation.

Abstract: Novel dry powder compositions comprising and methods relating thereto are provided. The dry powder compositions comprise PDE5 inhibitors, such as vardenafil, or pharmaceutically acceptable salts or esters thereof. The dry powder compositions may optionally include an carrier/excipient. The concentration of active agent may be at least about 2% by weight. Methods of aerosolizing the dry powder compositions and using them to treat various diseases are also disclosed.

Abstract: A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.

Abstract: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: An all in the head surface cleaning apparatus includes a surface cleaning head having a lower surface having a dirty air inlet. The surface cleaning head may include a brush motor drivingly connected to a movable brushing member having a brush motor axis. The surface cleaning head may include a cyclone comprising a cyclone chamber having a longitudinal cyclone axis. The surface cleaning head may include a suction motor having a first end, a second end and a suction motor axis extending between the first and second ends. The surface cleaning head may include a bleed valve having an inlet end, an outlet end and a body extending between the inlet and outlet ends. The body may have a bleed valve axis. The bleed valve axis may be generally parallel to at least one of the cyclone chamber axis, the suction motor axis and the brush motor axis.

Abstract: An all in the head surface cleaning apparatus may have a surface cleaning head including a front end, a rear end, first and second laterally opposed sidewalls. The surface cleaning head may include a cyclone assembly comprising a cyclone chamber and a dirt collection chamber. The cyclone chamber may have a longitudinal cyclone axis, a cyclone assembly air inlet port and a cyclone assembly air outlet port. The cyclone assembly may be moveable from a cleaning position to a cyclone assembly removal position. The surface cleaning head may include a biasing member biasing the cyclone assembly away from the cleaning position, and a suction motor having a suction motor air inlet and a suction motor axis. The apparatus may include an upper portion moveably mounted to the surface cleaning head between a storage position and a floor cleaning position, the upper portion comprising a drive handle.

Abstract: A surface cleaning head has a cyclone assembly with a cyclone assembly air inlet port and a cyclone assembly air outlet port, a first air flow path extending from a dirty air inlet to the cyclone assembly air inlet port, and a second air flow path extending from the cyclone assembly air outlet port to a suction motor air inlet. The cyclone assembly moveable from a cleaning position in which the cyclone assembly air inlet port is in communication with an outlet port of the first air flow path and cyclone assembly air outlet port is in communication with an inlet port of the second air flow path to a removal position in which the cyclone assembly air inlet port is spaced from the outlet port of the first air flow path and cyclone assembly air outlet port is spaced from the inlet port of the second air flow path.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.