Abstract: A system and method for processing large area substrates is provided. In one embodiment, a processing system includes a transfer chamber having at least one processing chamber and a substrate staging system coupled thereto. The staging system includes a load lock chamber having a first port coupled to the transfer chamber and a heat treating station coupled to a second port of the load lock chamber. A load lock robot is disposed in the load lock chamber to facilitate transfer between the heat treating station and the load lock chamber.

Abstract: Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.

Abstract: Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.

Abstract: A system and method for processing large area substrates is provided. In one embodiment, a processing system includes a transfer chamber having at least one processing chamber and a substrate staging system coupled thereto. The staging system includes a load lock chamber having a first port coupled to the transfer chamber and a heat treating station coupled to a second port of the load lock chamber. A load lock robot is disposed in the load lock chamber to facilitate transfer between the heat treating station and the load lock chamber.

Abstract: A fabrication system is provided which includes a storage apparatus coupled perpendicularly to a branch transport aisle, and one or more environmentally controlled fabrication tools coupled parallel to the branch transport aisle. The fabrication tools can encompass single chamber units or larger cluster tools with sub mainframes. The storage apparatus has one or more load ports which allow transfer of wafer carriers to or from a factory transport agent. A tool loading platform is positioned to receive a wafer carrier from the storage apparatus and to enable the fabrication tool to access a wafer carrier positioned thereon. A plurality of fabrication tools may be coupled beside each other within the equipment set. Each of the plurality of fabrication tools is coupled to the storage apparatus so that a wafer or wafer carrier may be received from or transferred to a factory transport agent and may travel along the storage apparatus to any of the plurality of fabrication tools coupled thereto.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A system adapted to exchange wafer carriers between an overhead transport mechanism and a platform is provided. The system employs a wafer carrier having at least one handle extending therefrom, an overhead transfer mechanism, a transporter coupled to the overhead transfer mechanism and adapted to move therealong and having a wafer carrier coupling mechanism adapted to couple to the at least one wafer carrier handle, a platform positioned below the overhead transfer mechanism such that wafer carriers traveling along the overhead transfer mechanism travel over the platform, and an actuator coupled to the platform and adapted so as to elevate the platform to an elevation wherein the loading platform may contact the bottom of a wafer carrier coupled to the overhead transfer mechanism.

Abstract: The method of the invention involves depositing a plurality of thin layers of film, each layer having a thickness ranging from about 500Å to about 2000Å. Low Pressure Chemical Vapor Deposition or other techniques known in the art maybe used to deposit each thin layer of film. The film is polysilicon or silicon-germanium, where the germanium content ranges from about 4% by weight to about 20% by weight germanium. A Rapid Thermal Anneal (“RTA”) is performed on a deposited thin film layer to relieve residual film stress in at least that film layer. The use of RTA rather than furnace annealing permits much shorter annealing times. Optionally, but advantageously, hydrogen may be present during RTA to permit the use of lower processing temperatures, typically about 20% lower relative to a customary anneal. A series of film deposition/rapid thermal anneal cycles is used to produce the desired, nominal total thickness polysilicon film.

Abstract: A method of determining the time to release of a movable feature in a multilayer substrate of silicon-containing materials including alternate layers of polysilicon and silicon oxide wherein a mass monitoring device determines the mass of a released feature, and the substrate is etched with anhydrous hydrogen fluoride until the substrate mass is equivalent to that of the released movable feature when the etch time is noted. A suitable mass monitoring device is a quartz crystal microbalance.

Abstract: An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local interconnection among a plurality of the inventive apparatuses, and enables independent loading of the factory load port and the tool load port. An inventive wafer handling method which divides a lot of wafers into sublots and distributes the sublots among tools configured to perform the same process is also provided.

Abstract: An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local interconnection among a plurality of the inventive apparatuses, and enables independent loading of the factory load port and the tool load port. An inventive wafer handling method which divides a lot of wafers into sublots and distributes the sublots among tools configured to perform the same process is also provided.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A system adapted to exchange wafer carriers between an overhead transport mechanism and a platform is provided. The system employs a wafer carrier having at least one handle extending therefrom, an overhead transfer mechanism, a transporter coupled to the overhead transfer mechanism and adapted to move therealong and having a wafer carrier coupling mechanism adapted to couple to the at least one wafer carrier handle, a platform positioned below the overhead transfer mechanism such that wafer carriers traveling along the overhead transfer mechanism travel over the platform, and an actuator coupled to the platform and adapted so as to elevate the platform to an elevation wherein the loading platform may contact the bottom of a wafer carrier coupled to the overhead transfer mechanism.

Abstract: An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local interconnection among a plurality of the inventive apparatuses, and enables independent loading of the factory load port and the tool load port. An inventive wafer handling method which divides a lot of wafers into sublots and distributes the sublots among tools configured to perform the same process is also provided.

Abstract: An improved apparatus and method is provided for handling, moving and storing semiconductor wafer carriers. The apparatus comprises two physically separate load ports, each coupled to a vertical transfer mechanism. Coupled between the two vertical transfer mechanisms is a horizontal transfer mechanism which extends above the footprint of the fabrication tool to which wafers are to be supplied. In a preferred embodiment the horizontal transfer mechanism comprises a bi-level conveyor comprised of a series of dual compartment segments. The dual compartment segments are coupled such that they may shift between a neutral and a positive position while maintaining a continuous movement channel between the two vertical transfer mechanisms. In this manner a wafer carrier may be placed within a first compartment of a neutrally positioned segment for movement; to store the wafer carrier the segment is shifted to the positive position.