Abstract: A method of step-wise exposing a voxel of a resist to radiation for forming a three-dimensional structure, the method comprising setting a step size to a first resolution; setting a voxel volume to a first volume; exposing a first set of voxels of said first volume to radiation using said first resolution; setting the step size to a second resolution being smaller than said first resolution, or, respectively, greater than said first resolution; setting the voxel volume to a second volume being smaller than said first volume, or, respectively, greater than said first volume; and exposing a second set of voxels of said second volume to radiation using said second resolution.

Abstract: A microchannel sensor for detecting radiation and/or particles, the microchannel sensor comprising at least one sensor substrate, wherein said sensor substrate comprises a plurality of channels extending from a first side of the substrate to an opposite side of the substrate, wherein said channels are arranged along a channel axis which is tilted relative a normal axis of said substrate, and wherein said plurality of channels comprise a first set of channels with a first cross section and a second set of channels with a second cross section being different from said first cross section.

Abstract: A method for coating one or more channels of a sample using a vapor deposition includes alternatingly supplying at least two gaseous precursor to one or more channels defined in a sample through at least one feed line that is connected to a first channel end of the one or more channels. An adjustable pressure gradient is generated and conducts the at least two gaseous precursors along a first flow direction (SR1) from the at least one feed line to a first discharge line through the one or more channels. The at least two gaseous precursor and reaction products are discharged from the one or more channels through a first discharge line that is connected to a second channel end of the one or more channels of the sample. Non-reacted precursors and reaction products are discharged through a second discharge line that is connected to the first channel end.