Abstract: Method of manufacturing a solar cell, comprising: providing a solar cell (100) having an active surface (105a) intended, in use, to be exposed to sunlight; forming, in correspondence of said active surface, a protection against low-energy protons and other radiations harmful to the solar cell. Forming a protection comprises forming a layer of resin (110; 210) and forming by deposition of material on the resin layer a layer of protective material (115; 215b) on top of the resin layer.

Abstract: A Monolithic photovoltaic cell is proposed. Said cell comprises at least one junction. Each one of said at least one junction comprises a base formed by a doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction. The semiconductor material of the base and/or of the emitter of at least one of said at least one junction is a semiconductor material formed by a compound of at least one first element and a second element. The band gap and the lattice constant of said semiconductor material of the base and/or of the emitter depend on the concentration of said first element in said compound with respect to said second element.

Abstract: A Monolithic photovoltaic cell is proposed. Said cell comprises at least one junction. Each one of said at least one junction comprises a base formed by a doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction. The semiconductor material of the base and/or of the emitter of at least one of said at least one junction is a semiconductor material formed by a compound of at least one first element and a second element. The band gap and the lattice constant of said semiconductor material of the base and/or of the emitter depend on the concentration of said first element in said compound with respect to said second element.

Abstract: An embodiment of a monolithic photovoltaic cell is provided. The photovoltaic cell comprises at least one junction; said at least one junction includes a base formed by an epitaxial doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction, and the base of at least one of said at least one junction has a decreasing dopant concentration gradient along said first direction. Said base comprises a first portion far from the emitter, a second portion proximate to the emitter, and a third portion between the first portion and the second portion. In the first portion, said decreasing dopant concentration gradient has a slope whose average value ranges from approximately ?9*1017 cm?3/?m to ?4*1017 cm?3/?m.

Abstract: An embodiment of a monolithic photovoltaic cell is provided. The photovoltaic cell comprises at least one junction; said at least one junction includes a base formed by an epitaxial doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction, and the base of at least one of said at least one junction has a decreasing dopant concentration gradient along said first direction. Said base comprises a first portion far from the emitter, a second portion proximate to the emitter, and a third portion between the first portion and the second portion. In the first portion, said decreasing dopant concentration gradient has a slope whose average value ranges from approximately ?9*1017 cm?3/?m to ?4*1017 cm?3/?M.