Patents by Inventor Roberta Lantier

Roberta Lantier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor device with a locally maximum concentration region between the source region and the drain region
    Patent number: 6885062
    Abstract: In order to obtain an on resistance that is as low as possible, it is proposed, in the case of a MOS transistor device, to form the avalanche breakdown region in an end region of a trench structure. As an alternative or in addition, it is proposed to form a region of local maximum dopant concentration of a first conductivity type in the region between a source and a drain in proximity to the gate insulation in a manner remote from the gate electrode.
    Type: Grant
    Filed: February 21, 2003
    Date of Patent: April 26, 2005
    Assignee: Infineon Technologies AG
    Inventors: Markus Zundel, Franz Hirler, Roberta Lantier
  • MOS transistor device
    Publication number: 20030173618
    Abstract: In order to obtain an on resistance that is as low as possible, it is proposed, in the case of a MOS transistor device, to form the avalanche breakdown region in an end region of a trench structure. As an alternative or in addition, it is proposed to form a region of local maximum dopant concentration of a first conductivity type in the region between a source and a drain in proximity to the gate insulation in a manner remote from the gate electrode.
    Type: Application
    Filed: February 21, 2003
    Publication date: September 18, 2003
    Inventors: Markus Zundel, Franz Hirler, Roberta Lantier