Patents by Inventor Roberto Campedelli
Roberto Campedelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11969757Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.Type: GrantFiled: March 3, 2021Date of Patent: April 30, 2024Assignee: STMICROELECTRONICS S.r.l.Inventors: Federico Vercesi, Alessandro Danei, Giorgio Allegato, Gabriele Gattere, Roberto Campedelli
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Publication number: 20230348258Abstract: MEMS structure, comprising: a semiconductor body; a cavity buried in the semiconductor body; a membrane suspended on the cavity; and at least one antistiction bump completely contained in the cavity with the function of preventing the side of the membrane internal to the cavity from sticking to the opposite side, which delimits the cavity downwardly.Type: ApplicationFiled: April 18, 2023Publication date: November 2, 2023Applicant: STMicroelectronics S.r.l.Inventors: Mikel AZPEITIA URQUIA, Enri DUQI, Silvia NICOLI, Roberto CAMPEDELLI, Igor VARISCO, Lorenzo TENTORI
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Publication number: 20230064114Abstract: The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.Type: ApplicationFiled: August 23, 2022Publication date: March 2, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Paolo FERRARI, Flavio Francesco VILLA, Roberto CAMPEDELLI, Luca LAMAGNA, Enri DUQI, Mikel AZPEITIA URQUIA, Silvia NICOLI, Maria Carolina TURI
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Publication number: 20210276044Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.Type: ApplicationFiled: March 3, 2021Publication date: September 9, 2021Applicant: STMicroelectronics S.r.l.Inventors: Federico VERCESI, Alessandro DANEI, Giorgio ALLEGATO, Gabriele GATTERE, Roberto CAMPEDELLI
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Patent number: 10221066Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: GrantFiled: July 26, 2016Date of Patent: March 5, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 10196262Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: GrantFiled: December 18, 2007Date of Patent: February 5, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 9824882Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.Type: GrantFiled: December 29, 2015Date of Patent: November 21, 2017Assignee: STMicroelectronics S.r.l.Inventors: Stefano Losa, Raffaella Pezzuto, Roberto Campedelli, Matteo Perletti, Luigi Esposito, Mikel Azpeitia Urquia
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Patent number: 9758373Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.Type: GrantFiled: April 25, 2014Date of Patent: September 12, 2017Assignee: STMICROELECTRONICS S.R.L.Inventors: Stefano Losa, Raffaella Pezzuto, Roberto Campedelli, Matteo Perletti, Luigi Esposito, Mikel Azpeitia Urquia
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Publication number: 20160332871Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: ApplicationFiled: July 26, 2016Publication date: November 17, 2016Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 9388038Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.Type: GrantFiled: April 29, 2014Date of Patent: July 12, 2016Assignee: STMicroelectronics S.r.l.Inventors: Roberto Campedelli, Raffaella Pezzuto, Stefano Losa, Marco Mantovani, Mikel Azpeitia Urquia
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Publication number: 20160130140Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.Type: ApplicationFiled: December 29, 2015Publication date: May 12, 2016Inventors: Stefano LOSA, Raffaella PEZZUTO, Roberto CAMPEDELLI, Matteo PERLETTI, Luigi ESPOSITO, Mikel Azpeitia URQUIA
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Patent number: 9162876Abstract: Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.Type: GrantFiled: March 13, 2012Date of Patent: October 20, 2015Assignee: STMicroelectronics S.r.l.Inventors: Pietro Corona, Marco Ferrera, Igor Varisco, Roberto Campedelli
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Patent number: 8998388Abstract: A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.Type: GrantFiled: April 15, 2014Date of Patent: April 7, 2015Assignee: STMicroelectronics S.r.l.Inventors: Mauro Cattaneo, Roberto Campedelli, Igor Varisco
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Publication number: 20140313264Abstract: A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.Type: ApplicationFiled: April 15, 2014Publication date: October 23, 2014Applicant: STMicroelectronics S.r.l.Inventors: Mauro Cattaneo, Roberto Campedelli, Igor Varisco
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Publication number: 20140231937Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.Type: ApplicationFiled: April 25, 2014Publication date: August 21, 2014Inventors: Stefano Losa, Raffaella Pezzuto, Roberto Campedelli, Matteo Perletti, Luigi Esposito, Mikel Azpeitia Urquia
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Publication number: 20140231938Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.Type: ApplicationFiled: April 29, 2014Publication date: August 21, 2014Inventors: Roberto Campedelli, Raffaella Pezzuto, Stefano Losa, Marco Mantovani, Mikel Azpeitia Urquia
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Patent number: 8344466Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity. Other embodiments are directed to MEMS devices and pressure sensors.Type: GrantFiled: August 4, 2010Date of Patent: January 1, 2013Assignee: STMicroelectronics S.r.l.Inventors: Pietro Corona, Stefano Losa, Ilaria Gelmi, Roberto Campedelli
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Publication number: 20120237061Abstract: Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.Type: ApplicationFiled: March 13, 2012Publication date: September 20, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Pietro Corona, Marco Ferrera, Igor Varisco, Roberto Campedelli
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Publication number: 20110031567Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity.Type: ApplicationFiled: August 4, 2010Publication date: February 10, 2011Applicant: STMICROELECTRONICS S.R.L.Inventors: Pietro Corona, Stefano Losa, Ilaria Gelmi, Roberto Campedelli
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Publication number: 20080164576Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: ApplicationFiled: December 18, 2007Publication date: July 10, 2008Applicant: STMICROELECTRONICS S.R.L.Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa