Abstract: A lens-free ultrathin imaging sensor using a compound-eye vision modality can be formed by forming a metasurface on each pixel of an array of pixels in a solid state imaging sensor. The metasurface can be configured to form a diffraction grating that directs light incident on the metasurface at a predefined angle to excite surface plasmon polaritons into the solid state imaging sensor and light incident at any other angle is reflected or diffracted away from the metasurface. Each pixel of the imaging sensor can be configured using the metasurface to only receive light incident from a different portion of a field of view. A computational imaging system can be used to construct the image from the individual pixels.

Abstract: A lens-free ultrathin imaging sensor using a compound-eye vision modality can be formed by forming a metasurface on each pixel of an array of pixels in a solid state imaging sensor. The metasurface can be configured to form a diffraction grating that directs light incident on the metasurface at a predefined angle to excite surface plasmon polaritons into the solid state imaging sensor and light incident at any other angle is reflected or diffracted away from the metasurface. Each pixel of the imaging sensor can be configured using the metasurface to only receive light incident from a different portion of a field of view. A computational imaging system can be used to construct the image from the individual pixels.

Abstract: An apparatus (275) and method of making a light emitting apparatus The light emitting apparatus (275) has a light emitting diode layer (285) and a stack of metal layers and dielectric layers (296) The metal layers may alternate with the dielectric layers The thickness of one or more metal layers determines a crossing pomt of one or more surface plasmon (SP) modes of one or more metal layers The thicknesses of the metal layer and dielectric layer control the size of an anticrossing of one or more SP modes of one or more metal layers.

Abstract: A self-mode-locking (SML) mid-infrared (5 and 8 &mgr;m) quantum cascade laser is formed that comprises both a relatively thin dielectric insulating layer (i.e., less than one-half micron in thickness) overlaid with an optically highly lossy (i.e., absorbing) layer, with a relatively long (approximately 3.5 mm) optical waveguide. Evidence of mode-locking is obtained from the measured optical spectra and corresponding interferograms, as well as from the rf spectra of the photocurrent detected with a fast quantum-well infrared photodetector. An estimate for the pulse width of approximately 3 psec is inferred from these data.

Abstract: In a mesa geometry semiconductor laser, a patterned dielectric coating used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

Abstract: A process for optically transmitting data to a remote receiver includes receiving a stream of input data signals and modulating a mid-IR laser by direct modulation with a waveform whose sequential values are responsive of the data signals of the stream. The direct modulation includes pumping the mid-IR laser to produce high and low optical power levels in response to different ones of the values. The process also includes transmitting output light from the modulated mid-IR laser to the remote receiver via a free space communications channel.

Abstract: A channel-obtaining device takes the desired channel and uses a resonant semiconductor device to mix the channel to a different frequency. The dropped channel is sufficiently removed from the other channels in frequency that it can be effectively separated.

Abstract: All-optical logic gates in which binary words are encoded using wavelength. A method and apparatus for processing information in this wavelength encoded format is provided. The processing may occur entirely in the optical domain. This approach is modular and enables construction of logic gates using custom wave guide chips that can be mass-produced in a manner similar to that of conventional electronic digital chips. Specific gates, such as AND, OR, EXOR, or NAND, may be "programmed" into a given chip during its fabrication to encode the desired truth table. The output states of the chip are determined by ultrafast mixing of binary encoded wavelengths in a semiconductor optical amplifier. The result is a new wavelength having a relationship to the input wavelengths determined entirely by the desired truth table. The possible clock-rates for these gates can be exceedingly high, such as several hundred Gigabits/second.

Abstract: A process for the cross-linking of high density polyethylene in the solid state according to which the polyethylene is admixed with the agents normally used for the vulcanization of unsaturated rubber compounds, then processed into the desired article and thereafter cross-linked at a temperature lower than the melting point of the polyethylene, the process being carried out in polyethylene containing a certain number of unsaturated bonds along the polymer chain.