Abstract: Presented is an EEPROM circuit comprising: a program array of a matrix of EEPROM cells arranged in columns and rows, a data array of a matrix of EEPROM cells arranged in columns and rows, the cells of the program and data array capable of being written, read, and erased; a reference voltage circuit coupled to the program array capable of producing voltages used to write to and erase data from the program array; a current generation circuit coupled to the program array for supplying current to the program array in operation. Advantageously according to the invention, the reference voltage circuit and the current generation circuit are additionally coupled to the data array. Moreover, the EEPROM circuit further comprises means for selectively connecting at least one of the rows of the program array to one of the rows of the data array, and for selectively connecting at least one of the columns of the program array to one of the columns of the data array.

Abstract: Presented is an EEPROM circuit comprising: a program array of a matrix of EEPROM cells arranged in columns and rows, a data array of a matrix of EEPROM cells arranged in columns and rows, the cells of the program and data array capable of being written, read, and erased; a reference voltage circuit coupled to the program array capable of producing voltages used to write to and erase data from the program array; a current generation circuit coupled to the program array for supplying current to the program array in operation. Advantageously according to the invention, the reference voltage circuit and the current generation circuit are additionally coupled to the data array. Moreover, the EEPROM circuit further comprises means for selectively connecting at least one of the rows of the program array to one of the rows of the data array, and for selectively connecting at least one of the columns of the program array to one of the columns of the data array.

Abstract: A circuit for the generation of a high ramp voltage for the supply of voltage to a capacitive load, in particular a high voltage for the programming or erasure of at least one memory cell of a non-volatile memory, comprises floating-gate transistors as storage elements. This generation circuit comprises a P type load transistor connected by its source to the output of a voltage booster delivering a high direct and constant voltage (HIV), by its drain to the load, the high ramp voltage being available at this drain, and by its control gate to a control feedback circuit to control the load current. This circuit achieves automatic control over the slope of the high ramp voltage (Vpp). Application to the generation of a high ramp voltage whose slope is smaller than a critical slope and the maximum value is high.