Abstract: The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 ?m or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 ?m or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

Abstract: A object of this invention is to provide an electrolytic processing method and apparatus that can suppress a change in the electric conductivity of a fluid due to contaminants, such as processing products produced in electrolytic processing, so that the fluid can maintain good flattening properties.

Abstract: The present invention intends to provide an industrially applicable diamond electrode and a diamond-coated silicon used in the electrode. A silicon substrate having a thickness of 500 ?m or less, at least partially coated with electrically conductive diamond is used as a diamond-coated silicon. In addition, an electrically conductive support substrate and the diamond-coated silicon is used as an electrode. The diamond-coated silicon is flexible and it can be adhered to the electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be easily obtained.