Patents by Inventor Robertus Theodorus Fransiscus Schaijk

Robertus Theodorus Fransiscus Schaijk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device to form high quality oxide layers of different thickness in one processing step
    Patent number: 7829411
    Abstract: The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration, and oxidising, during the same processing step, both the first and the second semiconductor region under a temperature between 500° C. and 700° C., preferably between 500° C. and 650° C. A corresponding device is also provided. Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.
    Type: Grant
    Filed: January 20, 2003
    Date of Patent: November 9, 2010
    Assignee: NXP B.V.
    Inventors: Josine Johanna Gerarda Petra Loo, Youri Ponomarev, Robertus Theodorus Fransiscus Schaijk