Abstract: A system and method is described for conducting research and development on an urban scale for the benefit of the urban community and communities at large. The system and method includes using financial and information technology (IT) models to construct a facility, attract participants to such a facility, and enabling these participants to engage in natural real world behaviors that has not been currently addressed in the art due to the complexity of creating such a facility. The urban community as well as communities at large benefit from information gathered and evaluated from fact9rs that affect an urban community such as, but not limited to, building construction, environment and bioremediation, energy systems, transportation systems, consumer behavior, complex environments, integrated security systems, and other systems that are vital to an urban community.

Abstract: A semiconductor device wherein Si-Ge is the base of a bipolar transistor and a Silicon layer is the emitter. A method of making such a semiconductor device including steps of forming a Silicon dioxide layer on a Silicon substrate, using a photo resist application and exposure to define where a HBT device will be placed. Plasma etching the Silicon dioxide layer to define an undercut, epitaxially growing an Si-Ge layer and a Silicon layer, and continuing manufacture to form one or more bipolar and CMOS devices and define interconnect and passivation.

Abstract: A semiconductor device wherein Si—Ge is the base of a bipolar transistor and a Silicon layer is the emitter. A method of making such a semiconductor device including steps of forming a Silicon dioxide layer on a Silicon substrate, using a photo resist application and exposure to define where a HBT device will be placed. Plasma etching the Silicon dioxide layer to define an undercut, epitaxially growing an Si—Ge layer and a Silicon layer, and continuing manufacture to form one or more bipolar and CMOS devices and define interconnect and passivation.

Abstract: A semiconductor device wherein some parts of a circuit are disposed on Si—Ge regions and others are implemented in Silicon substrate regions of the chip. The Si—Ge region provides that carrier flow is forced to the surface channel region which helps reduce short channel effects. A method of making such a semiconductor device is also provided and includes steps of forming a thermal oxide layer on a Silicon substrate, masking at least a portion of the thermal oxide layer, removing at least a portion of the thermal oxide layer in order to expose a portion of the Silicon substrate, epitaxially growing an Si—Ge layer on the exposed portion of the Silicon substrate, epitaxially growing a Silicon layer on the Si—Ge layer, and continuing manufacture of the device by forming a circuit on the Si—Ge regions and non-Si—Ge regions of the semiconductor device.

Abstract: A semiconductor device wherein Si—Ge is the base of a bipolar transistor and a Silicon layer is the emitter. A method of making such a semiconductor device including steps of forming a Silicon dioxide layer on a Silicon substrate, using a photo resist application and exposure to define where a HBT device will be placed. Plasma etching the Silicon dioxide layer to define an undercut, epitaxially growing an Si—Ge layer and a Silicon layer, and continuing manufacture to form one or more bipolar and CMOS devices and define interconnect and passivation.