Patents by Inventor Robin Abraham KOSHY

Robin Abraham KOSHY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HARDMASK CAPPING LAYER
    Publication number: 20150200093
    Abstract: A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include a hardmask layer formed over a substrate and a capping layer formed on the hardmask layer, the capping layer including a stack of at least two nanolayers.
    Type: Application
    Filed: March 26, 2015
    Publication date: July 16, 2015
    Inventor: Robin Abraham KOSHY
  • Forming a hardmask capping layer
    Patent number: 9028918
    Abstract: A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include forming a hardmask layer over a substrate and forming a capping layer on the hardmask layer, the capping layer including a stack of at least two nanolayers.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: May 12, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham Koshy
  • Method of forming hardmask layer with alternating nanolayers
    Patent number: 8900665
    Abstract: Forming a hardmask layer with an increased etch resistance based on alternating nanolayers of TiN with alternating residual stresses is disclosed. Embodiments include depositing a first nanolayer of TiN, and depositing a second nanolayer of TiN on the first nanolayer, wherein the first and second nanolayers have different residual stresses.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: December 2, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham Koshy
  • REDUCTION CHEMISTRY FOR ETCHING
    Publication number: 20140110857
    Abstract: An etching is performed with reduction chemistry to prevent erosion of a hard mask.
    Type: Application
    Filed: October 24, 2012
    Publication date: April 24, 2014
    Inventor: Robin Abraham KOSHY
  • HARDMASK CAPPING LAYER
    Publication number: 20140057099
    Abstract: A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include forming a hardmask layer over a substrate and forming a capping layer on the hardmask layer, the capping layer including a stack of at least two nanolayers.
    Type: Application
    Filed: August 21, 2012
    Publication date: February 27, 2014
    Applicant: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham KOSHY
  • HARDMASK LAYER WITH ALTERNATING NANOLAYERS
    Publication number: 20140057089
    Abstract: A hardmask layer is formed with an increased etch resistance based on alternating nanolayers of TiN with alternating residual stresses. Embodiments include depositing a first nanolayer of TiN, and depositing a second nanolayer of TiN on the first nanolayer, wherein the first and second nanolayers have different residual stresses.
    Type: Application
    Filed: August 27, 2012
    Publication date: February 27, 2014
    Applicant: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham KOSHY