Abstract: A method for measuring a capacitance associated with a portion of an integrated circuit is provided that includes coupling a measurement circuit to an integrated circuit. One or more transistors within the integrated circuit are initialized such that a steady-state associated with one or more of the transistors is achieved. A capacitance associated with the portion of the integrated circuit is then measured using the measurement circuit. The portion of the integrated circuit is selectively charged and discharged in response to a voltage potential being applied thereto such that a drain current is generated that serves as a basis for the capacitance measurement.

Abstract: A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.

Abstract: A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.

Abstract: A method for measuring a capacitance associated with a portion of an integrated circuit is provided that includes coupling a measurement circuit to an integrated circuit. One or more transistors within the integrated circuit are initialized such that a steady-state associated with one or more of the transistors is achieved. A capacitance associated with the portion of the integrated circuit is then measured using the measurement circuit. The portion of the integrated circuit is selectively charged and discharged in response to a voltage potential being applied thereto such that a drain current is generated that serves as a basis for the capacitance measurement.

Abstract: A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.

Abstract: A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.