Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

Abstract: A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.

Abstract: The present invention relates to compositions of matter represented by the general formula LnxLn′x′AyTizCe1−x−x′−y−zO2−&dgr; wherein Ln is selected from the group consisting of Sm, Gd, Y, Ln′ is selected from the group consisting of La, Pr, Nd, Pm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Lu; A is selected from the group consisting of Mg, Ca, Sr and Ba, 0.05≦x≦0.25, 0≦x′≦0.25, 0≦y≦0.03, 0.001≦z≦0.03, 0.05≦x+x′≦0.25, 0.001≦y+z≦0.03, wherein &dgr; is a number which renders the composition of matter charge neutral. The compositions can be formed into sintered bodies suitable for use as solid electrolytes in devices including solid-state oxygen generators. Such sintered bodies have greater than 95% theoretical density at temperatures at or below 1600° C., and can be produced by a solid-state method.

Abstract: A method for controlling the sulfur dioxide partial pressure in a pressurized, heated, oxygen-containing gas mixture which is contacted with an ion-conducting metallic oxide membrane which permeates oxygen ions. The sulfur dioxide partial pressure in the oxygen-depleted non-permeate gas from the membrane module is maintained below a critical sulfur dioxide partial pressure, pSO2*, to protect the membrane material from reacting with sulfur dioxide and reducing the oxygen flux of the membrane. Each ion-conducting metallic oxide material has a characteristic critical sulfur dioxide partial pressure which is useful in determining the required level of sulfur removal from the feed gas and/or from the fuel gas used in a direct-fired feed gas heater.

Abstract: A method for controlling the sulfur dioxide partial pressure in a pressurized, heated, oxygen-containing gas mixture which is contacted with an ion-conducting metallic oxide membrane which permeates oxygen ions. The sulfur dioxide partial pressure in the oxygen-depleted non-permeate gas from the membrane module is maintained below a critical sulfur dioxide partial pressure, pSO2*, to protect the membrane material from reacting with sulfur dioxide and reducing the oxygen flux of the membrane. Each ion-conducting metallic oxide material has a characteristic critical sulfur dioxide partial pressure which is useful in determining the required level of sulfur removal from the feed gas and/or from the fuel gas used in a direct-fired feed gas heater.

Abstract: The present invention relates to compositions of matter represented by the general formula

Abstract: An electrochemical device for separating oxygen from an oxygen-containing gas comprises a plurality of planar ion-conductive solid electrolyte plates and electrically-conductive gas-impermeable interconnects assembled in a multi-cell stack. Electrically-conductive anode and cathode material is applied to opposite sides of each electrolyte plate. A gas-tight anode seal is bonded between the anode side of each electrolyte plate and the anode side of the adjacent interconnect. A biasing electrode, applied to the anode side of each electrolyte plate between the anode seal and the edge of the anode, eliminates anode seal failure by minimizing the electrical potential across the seal. The seal potential is maintained below about 40 mV and preferably below about 25 mV. A gas-tight seal is applied between the cathode sides of each electrolyte plate and the adjacent interconnect such that the anode and cathode seals are radially offset on opposite sides of the plate.

Abstract: An electrochemical device for separating oxygen from an oxygen-containing gas comprises a plurality of planar ion-conductive solid electrolyte plates and electrically-conductive gas-impermeable interconnects assembled in a multi-cell stack. Electrically-conductive anode and cathode material is applied to opposite sides of each electrolyte plate. A gas-tight anode seal is bonded between the anode side of each electrolyte plate and the anode side of the adjacent interconnect. A regulating electrode, applied to the anode side of each electrolyte plate between the anode seal and the edge of the anode, eliminates anode seal failure by maintaining the 24-hour anode seal power density below about 1.5 .mu.W/cm.sup.2. A gas-tight seal is applied between the cathode sides of each electrolyte plate and the adjacent interconnect such that the anode and cathode seals are radially offset on opposite sides of the plate.

Abstract: An electrochemical device for separating oxygen from an oxygen-containing gas comprises a plurality of planar ion-conductive solid electrolyte plates and electrically-conductive gas-impermeable interconnects assembled in a multi-cell stack. Electrically-conductive anode and cathode material is applied to opposite sides of each electrolyte plate. A gas-tight anode seal is bonded between the anode side of each electrolyte plate and the anode side of the adjacent interconnect. A biasing electrode, applied to the anode side of each electrolyte plate between the anode seal and the edge of the anode, eliminates anode seal failure by minimizing the electrical potential across the seal. The seal potential is maintained below about 40 mV and preferably below about 25 mV. A gas-tight seal is applied between the cathode sides of each electrolyte plate and the adjacent interconnect such that the anode and cathode seals are radially offset on opposite sides of the plate.

Abstract: An electrochemical device for separating oxygen from an oxygen-containing gas comprises a plurality of planar ion-conductive solid electrolyte plates and electrically-conductive gas-impermeable interconnects assembled in a multi-cell stack. Electrically-conductive anode and cathode material is applied to opposite sides of each electrolyte plate. A gas-tight anode seal is bonded between the anode side of each electrolyte plate and the anode side of the adjacent interconnect. A biasing electrode, applied to the anode side of each electrolyte plate between the anode seal and the edge of the anode, eliminates anode seal failure by minimizing the electrical potential across the seal. The seal potential is maintained below about 40 mV and preferably below about 25 mV. A gas-tight seal is applied between the cathode sides of each electrolyte plate and the adjacent interconnect such that the anode and cathode seals are radially offset on opposite sides of the plate.

Abstract: The present invention is a method for manufacturing inorganic membranes which are capable of separating oxygen from oxygen-containing gaseous mixtures. The membranes comprise a porous composite of a thin layer of a multicomponent metallic oxide which has been deposited onto a porous support wherein the pores of the multicomponent metallic oxide layer are subsequently filled or plugged with a metallic-based species. The inorganic membranes are formed by depositing a porous multicomponent metallic oxide layer onto the porous support to form a porous composite having a network of pores capable of transporting gases. The network of pores are plugged or filled by organometallic vapor infiltration to form an inorganic membrane having essentially no through porosity.

Abstract: Planar solid-state membrane modules for separating oxygen from an oxygen-containing gaseous mixture which provide improved pneumatic and structural integrity and ease of manifolding. The modules are formed from a plurality of planar membrane units, each membrane unit which comprises a channel-free porous support having connected through porosity which is in contact with a contiguous dense mixed conducting oxide layer having no connected through porosity. The dense mixed conducting oxide layer is placed in flow communication with the oxygen-containing gaseous mixture to be separated and the channel-free porous support of each membrane unit is placed in flow communication with one or more manifolds or conduits for discharging oxygen which has been separated from the oxygen-containing gaseous mixture by permeation through the dense mixed conducting oxide layer of each membrane unit and passage into the manifolds or conduits via the channel-free porous support of each membrane unit.