Patents by Inventor Robin Forster

Robin Forster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a silicon carbide integrated circuit
    Patent number: 11626325
    Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 11, 2023
    Assignee: Raytheon Systems Limited
    Inventors: David Trann Clark, Robin Forster Thompson
  • SILICON CARBIDE INTEGRATED CIRCUIT
    Publication number: 20220384643
    Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Raytheon Systems Limited
    Inventors: David Trann Clark, Robin Forster Thompson
  • Silicon carbide integrated circuit
    Patent number: 11450568
    Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: September 20, 2022
    Assignee: Raytheon Systems Limited
    Inventors: David Trann Clark, Robin Forster Thompson
  • SILICON CARBIDE INTEGRATED CIRCUIT
    Publication number: 20180301379
    Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.
    Type: Application
    Filed: April 13, 2018
    Publication date: October 18, 2018
    Applicant: Raytheon Systems Limited
    Inventors: David Trann Clark, Robin Forster Thompson
  • Method of reducing cement kiln NOx emissions by water injection
    Publication number: 20050284347
    Abstract: A method and apparatus are disclosed for reducing total NOx emissions from a cement kiln. The method includes the step of injecting water into the flame of the kiln at a point proximate the initial ignition point of the burner. The apparatus includes an injection nozzle for injecting water into the burner flame. Also disclosed is an improved process for making cement clinker. The process includes the steps of burning fuel to generate a flame within a kiln, injecting water into the flame to control formation of nitrogen oxides within the kiln, introducing a mixture of cement raw materials into the kiln, and reacting the raw materials to form cement clinker.
    Type: Application
    Filed: June 29, 2005
    Publication date: December 29, 2005
    Applicant: Cemex Inc.
    Inventors: Robin Forster, Alexander Guyse, Michael McCabe