Abstract: A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath using a device which holds the substrate to be plated in spaced relation to an inhibitor electrode of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp ring which clamp ring has a through opening which overlies the inhibitor electrode. A cathode structure overlies the clamp ring and the cathode structure, substrate and clamp ring are secured to the device by a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so plating occurs on the surface of the inhibitor electrode. The substrate holding apparatus comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate overlies the inhibitor electrode and a cathode structure is secured against the plate member.

Abstract: A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath comprising using a specially designed device which holds the substrate to be plated in spaced relation to an inhibitor electrode which is part of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp which clamp has a through opening which is positioned to overlie the inhibitor electrode. A cathode structure overlies the clamp and the cathode structure, substrate and clamp are secured to the device by preferably a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so that plating is preferentially on the surface of the inhibitor electrode. The use of the method and apparatus minimizes plating on the backside of the substrate and provides a plated substrate on only the upper side of the substrate.