Patents by Inventor Robin John Jigour
Robin John Jigour has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10068654Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: GrantFiled: December 28, 2016Date of Patent: September 4, 2018Assignee: Winbond Electronics CorporationInventors: Robin John Jigour, Hui Chen, Oron Michael
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Publication number: 20170110196Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: ApplicationFiled: December 28, 2016Publication date: April 20, 2017Inventors: Robin John JIGOUR, Hui CHEN, Oron Michael
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Patent number: 9627082Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: GrantFiled: March 9, 2016Date of Patent: April 18, 2017Assignee: Winbond Electronics CorporationInventors: Robin John Jigour, Hui Chen, Oron Michael
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Patent number: 9620231Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: GrantFiled: March 9, 2016Date of Patent: April 11, 2017Assignee: Winbond Electronics CorporationInventors: Robin John Jigour, Hui Chen, Oron Michael
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Publication number: 20160189789Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: ApplicationFiled: March 9, 2016Publication date: June 30, 2016Applicant: Winbond Electronics CorporationInventors: Robin John Jigour, Hui Chen, Oron Michael
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Publication number: 20160189788Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: ApplicationFiled: March 9, 2016Publication date: June 30, 2016Inventors: Robin John Jigour, Hui Chen, Oron Michael
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Patent number: 9324450Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: GrantFiled: March 13, 2013Date of Patent: April 26, 2016Assignee: WINBOND ELECTRONICS CORPORATIONInventors: Robin John Jigour, Hui Chen, Oron Michael
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Patent number: 9128822Abstract: Certain functions relating to creation and use of a look-up table for bad block mapping may be implemented “on chip” in the memory device itself, that is on the same die in an additional circuit, or even within the command and control logic of the memory device, so as to reduce the overhead. Moreover, the on-chip implementation of the look-up table may be tightly integrated with other functions of the command and control logic to enable powerful new commands for NAND flash memory, such as a continuous read command and variations thereof.Type: GrantFiled: June 22, 2012Date of Patent: September 8, 2015Assignee: WINBOND ELECTRONICS CORPORATIONInventors: Oron Michael, Robin John Jigour, Anil Gupta
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Publication number: 20150199128Abstract: A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.Type: ApplicationFiled: March 27, 2015Publication date: July 16, 2015Applicant: Winbond Electronics CorporationInventors: Eungjoon Park, Robin John Jigour, Jooweon Park, Masaru Yano
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Patent number: 9021182Abstract: A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.Type: GrantFiled: September 30, 2011Date of Patent: April 28, 2015Assignee: Winbond Electronics CorporationInventors: Eungjoon Park, Robin John Jigour, Jooweon Park, Masaru Yano
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Publication number: 20140269065Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: WINBOND ELECTRONICS CORPORATIONInventors: Robin John Jigour, Hui Chen, Oron Michael
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Patent number: 8667368Abstract: A page buffer for a NAND memory array has a data register and a cache register that are suitably organized and operated to eliminate gaps and discontinuities in the output data during a continuous page read. The cache register may be organized in two portions, and the page data in the cache may be output from the cache portions in alternation. ECC delay may be eliminated from the output by performing the ECC computation on one cache portion while the other is being output. The data register may also be organized in two portions corresponding to the cache portions, so that data may be transferred to one cache portion while the other is being output. In a variation, the continuous page read may be done without ECC.Type: GrantFiled: May 4, 2012Date of Patent: March 4, 2014Assignee: Winbond Electronics CorporationInventors: Anil Gupta, Oron Michael, Robin John Jigour
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Publication number: 20130346671Abstract: Certain functions relating to creation and use of a look-up table for bad block mapping may be implemented “on chip” in the memory device itself, that is on the same die in an additional circuit, or even within the command and control logic of the memory device, so as to reduce the overhead. Moreover, the on-chip implementation of the look-up table may be tightly integrated with other functions of the command and control logic to enable powerful new commands for NAND flash memory, such as a continuous read command and variations thereof.Type: ApplicationFiled: June 22, 2012Publication date: December 26, 2013Applicant: WINBOND ELECTRONICS CORPORATIONInventors: Oron Michael, Robin John Jigour, Anil Gupta
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Publication number: 20130297987Abstract: A page buffer for a NAND memory array has a data register and a cache register that are suitably organized and operated to eliminate gaps and discontinuities in the output data during a continuous page read. The cache register may be organized in two portions, and the page data in the cache may be output from the cache portions in alternation. ECC delay may be eliminated from the output by performing the ECC computation on one cache portion while the other is being output. The data register may also be organized in two portions corresponding to the cache portions, so that data may be transferred to one cache portion while the other is being output. In a variation, the continuous page read may be done without ECC.Type: ApplicationFiled: May 4, 2012Publication date: November 7, 2013Applicant: WINBOND ELECTRONICS CORPORATIONInventors: Anil Gupta, Oron Michael, Robin John Jigour
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Publication number: 20120084491Abstract: A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.Type: ApplicationFiled: September 30, 2011Publication date: April 5, 2012Inventors: Eungjoon Park, Robin John Jigour, Jooweon Park, Masaru Yano