Patents by Inventor Robin JUNG

Robin JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230253401
    Abstract: The invention concerns a field-effect transistor (100) having an interdigited structure and comprising: a plurality of elementary transistor cells (50) arranged in parallel, each elementary cell comprising a source electrode (1), a drain electrode (3), and a gate electrode (2) interposed between the source and drain electrodes, a source terminal (10) and a drain terminal (30) respectively connected to the source electrodes (1) and to the drain electrodes (3) of the elementary cells (50), a gate terminal (20) connected to the gate electrodes (2) of the elementary cells. The field-effect transistor (100) only comprises vertical conductive vias to connect the gate electrodes to the gate terminal, and the gate terminal (20) is arranged vertically in line with all or part of the elementary cells (50).
    Type: Application
    Filed: June 15, 2021
    Publication date: August 10, 2023
    Applicant: EXAGAN SAS
    Inventor: Robin JUNG