Abstract: A method, system, and device for using an interface controller to validate and authenticate controller code for a commodity device to be included within a computer system (e.g., a power supply) are provided. In one example, a commodity device controller includes dynamic memory for control software (e.g., control code to control operation of the commodity device) that may be validated (and/or updated) using an interface controller. The interface controller may perform this update/validation at startup (or run-time) to ensure secure control over aspects of the computer device including the commodity device control code. If a security risk is detected it may be mitigated in various ways, including disabling of the commodity device. Control code provided by third-parties (e,g., supplier of commodity device) may be validated and secured using disclosed techniques.

Abstract: A system including multiple power supplies is provided. Each of the power supplies is configured to provide a standby power to a management unit in the system through a standby output and a main power through a main output, when an input power signal has been received for the system. The system also includes a resistor configured to receive a standby signal from each of the power supplies to raise a signal voltage, wherein the standby signal is a pre-selected current. The system also includes a controller in each of the power supplies, the controller configured to raise the signal voltage to the specified value when the signal voltage is greater than a threshold, and to enable the standby power from a respective power supply to reach the management unit when the signal voltage is within the specified value. A method to use the above system for a synchronized power supply to a management unit is also provided.

Abstract: A system including multiple power supplies is provided. Each of the power supplies is configured to provide a standby power to a management unit in the system through a standby output and a main power through a main output, when an input power signal has been received for the system. The system also includes a resistor configured to receive a standby signal from each of the power supplies to raise a signal voltage, wherein the standby signal is a pre-selected current. The system also includes a controller in each of the power supplies, the controller configured to raise the signal voltage to the specified value when the signal voltage is greater than a threshold, and to enable the standby power from a respective power supply to reach the management unit when the signal voltage is within the specified value. A method to use the above system for a synchronized power supply to a management unit is also provided.

Abstract: Apparatus and related methods for serially and removably connecting a plurality of electrical fixtures. An exemplary apparatus includes a connector housing having a mounting surface, a first set of electrical contacts positioned, at least in part, in the connector housing, a second set of electrical contacts positioned, at least in part, in the connector housing, and a plurality of conductive member extending from the first set of electrical contacts to the second set of electrical contacts, such that a first electrical fixture removably connected to the first set of electrical contacts is in serial electrical communication with a second electrical fixture removably connected to the second set of electrical contacts.

Abstract: A fast acting unidirectional or bidirectional electronic circuit breaker for isolating a load from a power-supply unit is described. The described control method for an electronic circuit breaker is capable of instantaneous trip during a short circuit event by improved means of current sensing. The improved control method eliminates the need for additional series components in the conduction path which can add to the circuit breaker's insertion losses. Also, any delay or bandwidth limitations commonly associated with magnetic or hall-effect current sensing methods are eliminated. Circuit breakers with automatic or manual reset options are also described.

Abstract: Apparatus and related methods for serially and removably connecting a plurality of electrical fixtures. An exemplary apparatus includes a connector housing having a mounting surface, a first set of electrical contacts positioned, at least in part, in the connector housing, a second set of electrical contacts positioned, at least in part, in the connector housing, and a plurality of conductive member extending from the first set of electrical contacts to the second set of electrical contacts, such that a first electrical fixture removably connected to the first set of electrical contacts is in serial electrical communication with a second electrical fixture removably connected to the second set of electrical contacts.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.