Patents by Inventor Robin L. Williams

Robin L. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020081825
    Abstract: The present invention relates to a method for reproducibly forming a predetermined quantum dot structure and a device produced using same. A crystal facet of a substrate base is patterned for providing a predetermined portion of the crystal facet for subsequent predetermined crystal growth. A first growth material is deposited for crystallographically growing a predetermined mesa structure on the predetermined portion of the crystal facet. The mesa structure, which is a portion of the quantum dot structure, comprises predetermined low index side facets and a predetermined top surface. A second growth material for forming at least a quantum dot on the mesa structure is then deposited. The number, the lateral dimensions and the location of the at least a quantum dot is determined by the mesa structure. A sufficient amount of the second growth material is deposited such that a sufficient thickness for Straski-Krastinow growth of the second growth material on the top surface of the mesa structure is exceeded.
    Type: Application
    Filed: October 29, 2001
    Publication date: June 27, 2002
    Inventors: Robin L. Williams, Jacques Lefebvre, Philip Poole, Geoffrey C. Aers, Charles Lacelle, Jeffrey W. Fraser
  • Patent number: 5111466
    Abstract: Optical multilayer structures for harmonic laser emission are disclosed. The multilayer structures are made of plurality of layers of different optically nonlinear semiconductor materials. The thicknesses, locations and refractive indices of the layers are designed, according to a modified Fourier transform, to give a broad bandwidth for interaction of fundamental light fields. Various applications are envisioned and described, e.g. spectrometers, non-blocking switching systems, wavelength division multiplexing fiber optic receivers etc.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: May 5, 1992
    Assignee: National Research Council of Canada
    Inventors: Richard J. F. Normandin, Sylvie Letourneau, Francoise Chatenoud, Robin L. Williams
  • Patent number: 5051617
    Abstract: Sum frequency generating devices are disclosed. The devices include a waveguide having a multilayer structure comprising at least one nonlinear semiconductor material. In a preferred embodiment, each of the layers of the multilayer structure has the same thickness and alternate layers have a first and a second predetermined refractive index. The sum frequency output generated by two contra-propagating beams of fundamental wavelengths within the waveguide is enhanced by the multilayer structure of the waveguide. The sum frequency output is in a direction different from that of the waveguide and contrapropagating fundamental beams.
    Type: Grant
    Filed: June 29, 1990
    Date of Patent: September 24, 1991
    Assignee: National Research Council Canada
    Inventors: Richard J. F. Normandin, Francoise Chatenoud, Robin L. Williams