Abstract: A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a polysilicon layer over a substrate, the polysilicon layer having an outer surface of a first degree of roughness; b) providing a layer of a refractory metal silicide over the outer surface of the polysilicon layer, the refractory metal silicide preferably being WSi.sub.x where "x" is initially from 1.0 to 2.5, the WSi.sub.x layer and the polysilicon layer outer surface defining a first interface therebetween; c) annealing the substrate at a temperature and for a time period which are effective to transform the WSi.sub.x into a tetragonal crystalline structure and to transform the first interface into a different second interface, the WSi.sub.x layer not being in a tetragonal crystalline state prior to the anneal, the WSi.sub.x at the second interface having an increased value of "x" from the initial value of "x"; and d) etching the WSi.sub.

Abstract: A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a polysilicon layer over a substrate, the polysilicon layer having an outer surface of a first degree of roughness; b) providing a layer of a refractory metal silicide over the outer surface of the polysilicon layer, the refractory metal silicide preferably being WSi.sub.x where "x" is initially from 1.0 to 2.5, the WSi.sub.x layer and the polysilicon layer outer surface defining a first interface therebetween; c) annealing the substrate at a temperature and for a time period which are effective to transform the WSi.sub.x into a tetragonal crystalline structure and to transform the first interface into a different second interface, the WSi.sub.x layer not being in a tetragonal crystalline state prior to the anneal, the WSi.sub.x at the second interface having an increased value of "x" from the initial value of "x"; and d) etching the WSi.sub.