Patents by Inventor Robin M. Schulz

Robin M. Schulz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tensile strained high percentage silicon germanium alloy FinFETS
    Patent number: 10211341
    Abstract: A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: February 19, 2019
    Assignee: International Business Machines Corporation
    Inventors: Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz
  • TENSILE STRAINED HIGH PERCENTAGE SILICON GERMANIUM ALLOY FINFETS
    Publication number: 20180047847
    Abstract: A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure.
    Type: Application
    Filed: October 24, 2017
    Publication date: February 15, 2018
    Inventors: Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz
  • Tensile strained high percentage silicon germanium alloy FinFETs
    Patent number: 9812571
    Abstract: A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: November 7, 2017
    Assignee: International Business Machines Corporation
    Inventors: Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz
  • TENSILE STRAINED HIGH PERCENTAGE SILICON GERMANIUM ALLOY FINFETS
    Publication number: 20170092765
    Abstract: A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 30, 2017
    Inventors: Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz