Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive materials and fabrication method therefor. Photosensitive materials are used in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern dimension. The masks may have features above the surface formed from opaque or attenuating materials. Alumino-boro-germano-silicate glasses having a composition comprising, in terms of mole percentage, 1-6% of Al2O3, 10-36% of B2O3, 2-20% of GeO2, 40-80% of SiO2, 2-10% of R2O, where R is selected from Li, Na and K, and expressed in terms of weight percentage of the glass, 0-5% of F, can be used for the mask substrate.

Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive films and fabrication method therefor. Photosensitive films are deposited on a substrate in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern depth. The masks may have features above the surface formed from opaque or attenuating materials. Boro-germano-silicate photosensitive films having a composition consisting essentially, in terms of mole percentage, of: 0-20% of B2O3, 5-25% of GeO2 and the remainder SiO2 can be used for the film. The film is advantageously deposited by using PECVD wherein tetramethoxygermane is used as the germanium source.