Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided herein are monoliths with attached recognition compounds which selectively bind ligands, methods of preparing such monoliths, arrays thereof and uses thereof. For example, monoliths provided herein can be used in columns and arrays thereof.

Abstract: Provided herein are monoliths with attached recognition compounds which selectively bind ligands, methods of preparing such monoliths, arrays thereof and uses thereof. For example, monoliths provide herein can be used in columns and arrays thereof.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: Provided herein are monoliths with attached recognition compounds which selectively bind ligands, methods of preparing such monoliths, arrays thereof and uses thereof. For example, monoliths provide herein can be used in columns and arrays thereof.

Abstract: Provided herein are architectures and compositions of capture templates and macro capture templates, optionally attached to dendrimers, methods of using capture templates and/or macro capture templates, optionally attached to dendrimers to route coding templates, novel combinations including solid supports and capture templates and/or macro capture templates, optionally attached to dendrimers, methods of using novel combinations of solid supports and dendrimers and capture templates and/or macro capture templates to route coding templates, novel compositions which include capture templates and macro capture templates, optionally attached to dendrimers, hybridized to coding templates and novel compositions including solid supports, and capture templates and/or macro capture templates optionally attached to dendrimers hybridized to coding templates.

Abstract: Provided herein are monoliths with attached recognition compounds which selectively bind ligands, methods of preparing such monoliths, arrays thereof and uses thereof. For example, monoliths provide herein can be used in columns and arrays thereof.

Abstract: Disclosed herein are methods of estimating LogD of compounds comprising a ligand operatively linked to a recognition element. The methods generally involve contacting the compounds with a matrix, measuring the interaction of the compounds with the matrix and relating the interaction of the compounds with the matrix to LogD of the compounds. Also, described herein, are novel compounds which include a ligand operatively linked to a recognition element and linkers that connect the ligand to the recognition element.

Abstract: Provided herein are monoliths with attached recognition compounds which selectively bind ligands, methods of preparing such monoliths, arrays thereof and uses thereof. For example, monoliths provide herein can be used in columns and arrays thereof.

Abstract: A method for patterning nanostructures in a semiconductor heterostructure, which has at least a first layer and a second layer, wherein the first layer has a first surface and an opposite, second surface, the second layer has a first surface and an opposite, second surface, and the first layer is deposited over the second layer such that the second surface of the first layer is proximate to the first surface of the second layer. The method includes the steps of making indentations in a pattern on the first surface of the first layer of the semiconductor heterostructure; bonding the semiconductor heterostructure to a support substrate such that the first surface of the first layer of the semiconductor heterostructure is faced to the support substrate; etching off the second layer of the semiconductor heterostructure; and depositing a third layer over the second surface of the first layer of the semiconductor heterostructure.

Abstract: A dampening mechanism for an electrical for an electrical switching apparatus, such as a draw-out circuit breaker, includes a mounting bracket coupled to the circuit breaker, a pivot member, at least one biasing element, and a damper. The circuit breaker is movable into and out of an installed position within a switchgear enclosure. The pivot member pivots between first and second positions corresponding to the circuit breaker not being fully installed and being disposed in the installed position, respectively. The biasing element biases the pivot member toward the first position. When the circuit breaker is moved toward the installed position, the second end of the pivot member engages at least one of a back panel and a ledge of the enclosure, thereby pivoting the pivot member toward the second position. When the pivot member is disposed in the second position, the damper is biased against the ledge of the enclosure to dampen undesired vertical motion of the circuit breaker.

Abstract: A dampening mechanism for an electrical for an electrical switching apparatus, such as a draw-out circuit breaker, includes a mounting bracket coupled to the circuit breaker, a pivot member, at least one biasing element, and a damper. The circuit breaker is movable into and out of an installed position within a switchgear enclosure. The pivot member pivots between first and second positions corresponding to the circuit breaker not being fully installed and being disposed in the installed position, respectively. The biasing element biases the pivot member toward the first position. When the circuit breaker is moved toward the installed position, the second end of the pivot member engages at least one of a back panel and a ledge of the enclosure, thereby pivoting the pivot member toward the second position. When the pivot member is disposed in the second position, the damper is biased against the ledge of the enclosure to dampen undesired vertical motion of the circuit breaker.