Patents by Inventor Robin S. Bloom

Robin S. Bloom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-active waveguides on planar lightwave circuits
    Patent number: 7095913
    Abstract: A planar lightwave circuit includes a first active waveguide, a second active waveguide, and a non-active waveguide interposed between the first and the second active waveguides. The circuit further includes a third active waveguide that intersects (1) the first active waveguides at a first cross point, and (2) the second active waveguide at a second cross point. A first active perturbation is located at the first cross point, and a second active perturbation is located at the second cross point. A passive perturbation is located at one of the first, the second, and the third active waveguide.
    Type: Grant
    Filed: April 2, 2003
    Date of Patent: August 22, 2006
    Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
    Inventor: Robin S. Bloom
  • Non-active waveguides on planar lightwave circuits
    Publication number: 20040197044
    Abstract: A planar lightwave circuit includes a first active waveguide, a second active waveguide, and a non-active waveguide interposed between the first and the second active waveguides. The circuit further includes a third active waveguide that intersects (1) the first active waveguides at a first cross point, and (2) the second active waveguide at a second cross point. A first active perturbation is located at the first cross point, and a second active perturbation is located at the second cross point. A passive perturbation is located at one of the first, the second, and the third active waveguide.
    Type: Application
    Filed: April 2, 2003
    Publication date: October 7, 2004
    Inventor: Robin S. Bloom
  • Method of forming dielectric films
    Patent number: 6638876
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: October 28, 2003
    Assignee: Mattson Technology, Inc.
    Inventors: Sagy Levy, Robin S. Bloom, Avashai Kepten
  • Method of forming dielectric films
    Publication number: 20020142624
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
    Type: Application
    Filed: September 19, 2001
    Publication date: October 3, 2002
    Applicant: Mattson Technology, Inc.
    Inventors: Sagy Levy, Robin S. Bloom, Avashai Kepten