Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a vapor phase epitaxy (HVPE) chamber.

Abstract: Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.

Abstract: An internal combustion engine crankcase lubricating oil composition has a phosphorus content of not greater than 0.09 mass % a metal detergent additive system comprising one or more metal salts of organic carboxylic acids, and a viscosity index improver comprising a linear diblock copolymer, one block being derived from a vinyl aromatic hydrocarbon monomer and one block being derived from a diene monomer.

Abstract: A method of improving the seal compatibility and/or copper corrosion performance of lubricating oil compositions for the lubrication of the crankcases of an internal combustion engine, which method includes the step of adding to the lubricating oil compositions a minor amount of a non-hydrogenated (unsaturated) olefin polymer. Also described are lubricating oil compositions for engines and transmissions, which compositions contain sulphur and/or a salicylate soap and a minor amount of a non-hydrogenated (unsaturated) polymer, which compositions are compatible with nitrile rubber engine and transmission seals and copper-containing engine and transmission components.

Abstract: A heavy duty diesel engine lubricating oil composition comprising, or made by admixing:

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.