Patents by Inventor Robin Teitzel

Robin Teitzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060002603
    Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.
    Type: Application
    Filed: July 1, 2004
    Publication date: January 5, 2006
    Inventors: Robert Beauchaine, Thomas Chabreck, Samuel Howells, John Hubbard, Asher Klatchko, Peter Pirogovsky, Robin Teitzel
  • Publication number: 20060001688
    Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.
    Type: Application
    Filed: July 1, 2004
    Publication date: January 5, 2006
    Inventors: Thomas Chabreck, Samuel Howells, John Hubbard, Robin Teitzel
  • Patent number: 6720565
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: April 13, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
  • Publication number: 20020148978
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
    Type: Application
    Filed: October 26, 2001
    Publication date: October 17, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen, Mary Veneklasen
  • Patent number: 6373071
    Abstract: The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: April 16, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Robert Innes, Sergey Babin, Robin Teitzel, Lee Veneklasen
  • Patent number: 5876902
    Abstract: A hybrid exposure strategy for pattern generation uses wide field raster scan deflection and a uniformly moving stage to expose long stripes. Periodic analog wide field magnetic scan is augmented by a high speed electrostatic retrograde scan to keep the beam stationary during exposure of rectangular flash fields. The system's data path utilizes a pattern represented in a rasterized format. Intermediate vector data bases are created using fracture rules that limit feature and hierarchical cell size of to be smaller than overlapping fringes of stripe data fields. Rectangular flash fields are employed with each field being a 1 by n array of writing pixels. The length, origin position and dose of line shaped beam flashes can be varied to allow patterns to be exposed on a design grid much smaller than a writing pixel. The length, origin position and dose data for each flash is derived from a rasterized data format using a decoder device.
    Type: Grant
    Filed: January 28, 1997
    Date of Patent: March 2, 1999
    Assignee: Etec Systems, Inc.
    Inventors: Lee H. Veneklasen, William DeVore, R. L. Smith, Robin Teitzel
  • Patent number: 5327338
    Abstract: A direct-write lithography tool having improved alignment characteristics. The present invention discloses use of an optical alignment apparatus in a multi-beam lithography system. The optical alignment apparatus provides for alignment through a reduction lens utilized by the multi-beam lithography system for writing to semiconductor wafers and the like through use of optics for correction of distortion and curvature caused by viewing with a radiant energy beam of a different wavelength than the beams used for writing. Further, the alignment optics provide for multiple paths in a single optics system through use of liquid crystal retarders and beam splitters to direct the radiant energy beam through a selected optical path. In the present invention, a first optical path may provide for high magnification and a second for low magnification. Further, other optical paths may provide for bright or dark field illumination and viewing.
    Type: Grant
    Filed: November 9, 1992
    Date of Patent: July 5, 1994
    Assignee: ETEC Systems, Inc.
    Inventors: Paul Allen, Mike Bohan, Tim Thomas, Robin Teitzel
  • Patent number: 4956650
    Abstract: An improved pattern generation system. The pattern generation system of the present invention discloses an improved optical system for correcting problems of astigmatism and ellipticity in a radiant energy beam used for generating patterns on a workpiece. The present invention further discloses improved control circuitry for controlling modulation of said beams. The control circuitry corrects for problems of isofocal bias caused by non-linearities in the turn-on/turn-off of the beams.
    Type: Grant
    Filed: August 26, 1988
    Date of Patent: September 11, 1990
    Assignee: ATEQ Corporation
    Inventors: Paul C. Allen, Robin Teitzel, Timothy Thomas