Patents by Inventor Robin Van Den Nieuwenhuizen

Robin Van Den Nieuwenhuizen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of repairing probe pads
    Patent number: 8822994
    Abstract: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: September 2, 2014
    Assignees: STMicroelectronics, Inc., International Business Machines Corporation
    Inventors: John H. Zhang, Laertis Economikos, Robin Van Den Nieuwenhuizen, Wei-Tsu Tseng
  • METHOD OF REPAIRING PROBE PADS
    Publication number: 20130072011
    Abstract: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 21, 2013
    Applicants: IBM SEMICONDUCTOR RESEARCH AND DEVELOPMENT CENTER (SRDC), STMICROELECTRONICS, INC.
    Inventors: John H. Zhang, Laertis Economikos, Robin Van Den Nieuwenhuizen, Wei-Tsu Tseng
  • METHOD OF REPAIRING PROBE PADS
    Publication number: 20130063173
    Abstract: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 14, 2013
    Applicants: IBM Semiconductor Research and Development Center (SRDC), STMicroelectronics, Inc.
    Inventors: John H. Zhang, Laertis Economikos, Robin Van Den Nieuwenhuizen, Wei-Tsu Tseng
  • Method of repairing probe pads
    Patent number: 8324622
    Abstract: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
    Type: Grant
    Filed: December 31, 2009
    Date of Patent: December 4, 2012
    Assignees: STMicroelectronics Inc., International Business Machines Corporation
    Inventors: John H. Zhang, Laertis Economikos, Robin Van Den Nieuwenhuizen, Wei-Tsu Tseng
  • METHOD OF REPAIRING PROBE PADS
    Publication number: 20110156032
    Abstract: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
    Type: Application
    Filed: December 31, 2009
    Publication date: June 30, 2011
    Applicants: STMICROELECTRONICS, INC., IBM Semiconductor Research and Development Center (SRDC)
    Inventors: John H. Zhang, Laertis Economikos, Robin Van Den Nieuwenhuizen, Wei-Tsu Tseng
  • Method and structure for forming multiple self-aligned gate stacks for logic devices
    Patent number: 7790541
    Abstract: A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack layers on a second portion of the substrate adjacent to the first portion of the substrate, etching to form a trench disposed between the first portion and the second portion of the substrate, and filling the trench with an insulating material.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: September 7, 2010
    Assignees: International Business Machines Corporation, Advanced Micro Devices, Inc. (AMD)
    Inventors: Bruce B. Doris, Mahender Kumar, Werner A. Rausch, Robin Van Den Nieuwenhuizen
  • METHOD AND STRUCTURE FOR FORMING MULTIPLE SELF-ALIGNED GATE STACKS FOR LOGIC DEVICES
    Publication number: 20090140347
    Abstract: A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack layers on a second portion of the substrate adjacent to the first portion of the substrate, etching to form a trench disposed between the first portion and the second portion of the substrate, and filling the trench with an insulating material.
    Type: Application
    Filed: December 4, 2007
    Publication date: June 4, 2009
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, ADVANCED MICRO DEVICES, INC. (AMD)
    Inventors: Bruce B. Doris, Mahender Kumar, Werner A. Rausch, Robin Van Den Nieuwenhuizen