Patents by Inventor Robin Hsin-Ku CHAO

Robin Hsin-Ku CHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming the semiconductor device
    Patent number: 10541239
    Abstract: A semiconductor device includes a first SiGe fin formed on a substrate and including a first amount of Ge, and a second SiGe fin formed on a substrate and including a central portion including a second amount of Ge, and a surface portion comprising a third amount of Ge which is greater than the second amount.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: January 21, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robin Hsin-Ku Chao, Hemanth Jagannathan, ChoongHyun Lee, Chun Wing Yeung, Jingyun Zhang
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
    Publication number: 20180286862
    Abstract: A semiconductor device includes a first SiGe fin formed on a substrate and including a first amount of Ge, and a second SiGe fin formed on a substrate and including a central portion including a second amount of Ge, and a surface portion comprising a third amount of Ge which is greater than the second amount.
    Type: Application
    Filed: May 31, 2018
    Publication date: October 4, 2018
    Inventors: Robin Hsin-Ku Chao, Hemanth Jagannathan, ChoongHyun Lee, Chun Wing Yeung, Jingyun Zhang
  • Semiconductor device and method of forming the semiconductor device
    Patent number: 10079233
    Abstract: A method of forming a semiconductor device, includes forming first and second SiGe fins on a substrate, forming a protective layer on the first SiGe fin, forming a germanium-containing layer on the second SiGe fin and on the protective layer on the first SiGe fin, and performing an anneal to react the germanium-containing layer with a surface of the second SiGe fin.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: September 18, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robin Hsin-Ku Chao, Hemanth Jagannathan, ChoongHyun Lee, Chun Wing Yeung, Jingyun Zhang
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
    Publication number: 20180090494
    Abstract: A method of forming a semiconductor device, includes forming first and second SiGe fins on a substrate, forming a protective layer on the first SiGe fin, forming a germanium-containing layer on the second SiGe fin and on the protective layer on the first SiGe fin, and performing an anneal to react the germanium-containing layer with a surface of the second SiGe fin.
    Type: Application
    Filed: September 28, 2016
    Publication date: March 29, 2018
    Inventors: Robin Hsin-Ku CHAO, Hemanth JAGANNATHAN, ChoongHyun LEE, Chun Wing YEUNG, Jingyun ZHANG