Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: In described embodiments, methods for selective etching (thermal etching) of metals, especially molybdenum- and tungsten-containing materials, and titanium nitride, using thionyl chloride (SOCl2) as an etching gas at low temperatures and low pressure without a need of plasma, for device manufacturing processes and for process chamber cleanings are disclosed. Methods for cleaning reaction product deposits from interior surface of a reactor chamber or from a substrate within said reaction chamber using thionyl chloride (SOCl2) at low temperatures and low pressure without a need of plasma are also disclosed. An additional co-reactant such as hydrogen may be used in combination with thionyl chloride. The processes are carried out in temperature ranging from approximately 150° C. to approximately 600° C., pressure under<100 Torr without the need of a plasma-activation.

Abstract: Disclosed is a method for forming a metal-containing film on a substrate comprises the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene)2, wherein M is Cr, Mo, or W; arene is wherein R1, R2, R3, R4, R5 and R6 each is independently selected from H, C1-C6 alkyl, C1-C6 alkenyl, C1-C6 alkylphenyl, C1-C6 alkenylphenyl, or —SiXR7R8, wherein X is selected from F, Cl, Br, I, and R7, R8 each are selected from H, C1-C6 alkyl, C1-C6 alkenyl.

Abstract: To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge.