Abstract: A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a graphene layer on the substrate layer and selectively depositing boundary cappings on defects of the graphene layer to inhibit corrosion of the substrate layer at the defects. Optionally, the boundary cappings may include nano-sized crystals deposited only at the defects. The selectively depositing may include electrodepositing boundary cappings on exposed portions of the substrate layer at the defects. The selectively depositing may include reacting boundary capping material with exposed portions of the substrate layer at the defects to deposit the boundary cappings only at the defects.

Abstract: A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a graphene layer on the substrate layer and selectively depositing boundary cappings on defects of the graphene layer to inhibit corrosion of the substrate layer at the defects. Optionally, the boundary cappings may include nano-sized crystals deposited only at the defects. The selectively depositing may include electrodepositing boundary cappings on exposed portions of the substrate layer at the defects. The selectively depositing may include reacting boundary capping material with exposed portions of the substrate layer at the defects to deposit the boundary cappings only at the defects.

Abstract: An electronic device is moved into a first position with respect to probes for making electrical contact with the device. The electronic device is then moved into a second position in which the electronic device is pressed against the probes, compressing the probes. The movement into the second position includes two components. One component of the movement tends to press the electronic device against the probes, compressing the probes and inducing a stress in the probes. The second movement tends to reduce that stress. Test data are then communicated to and from the electronic device through the probes.

Abstract: A carbon nanotube contact structure can be used for making pressure connections to a DUT. The contact structure can be formed using a carbon nanotube film or with carbon nanotubes in solution. The carbon nanotube film can be grown in a trench in a sacrificial substrate in which a contact structure such as a beam or contact element is then formed by metal plating. The film can also be formed on a contact element and have metal posts dispersed therein to provide rigidity and elasticity. Contact structures or portions thereof can also be plated with a solution containing carbon nanotubes. The resulting contact structure can be tough, and can provide good electrical conductivity.

Abstract: A carbon nanotube contact structure can be used for making pressure connections to a DUT. The contact structure can be formed using a carbon nanotube film or with carbon nanotubes in solution. The carbon nanotube film can be grown in a trench in a sacrificial substrate in which a contact structure such as a beam or contact element is then formed by metal plating. The film can also be formed on a contact element and have metal posts dispersed therein to provide rigidity and elasticity. Contact structures or portions thereof can also be plated with a solution containing carbon nanotubes. The resulting contact structure can be tough, and can provide good electrical conductivity.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: An electronic device is moved into a first position with respect to probes for making electrical contact with the device. The electronic device is then moved into a second position in which the electronic device is pressed against the probes, compressing the probes. The movement into the second position includes two components. One component of the movement tends to press the electronic device against the probes, compressing the probes and inducing a stress in the probes. The second movement tends to reduce that stress. Test data are then communicated to and from the electronic device through the probes.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: An electronic device is moved into a first position with respect to probes for making electrical contact with the device. The electronic device is then moved into a second position in which the electronic device is pressed against the probes, compressing the probes. The movement into the second position includes two components. One component of the movement tends to press the electronic device against the probes, compressing the probes and inducing a stress in the probes. The second movement tends to reduce that stress. Test data are then communicated to and from the electronic device through the probes.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

Abstract: An electronic device is moved into a first position with respect to probes for making electrical contact with the device. The electronic device is then moved into a second position in which the electronic device is pressed against the probes, compressing the probes. The movement into the second position includes two components. One component of the movement tends to press the electronic device against the probes, compressing the probes and inducing a stress in the probes. The second movement tends to reduce that stress. Test data are then communicated to and from the electronic device through the probes.

Abstract: The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.