Abstract: A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 kgf, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds.

Abstract: A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.

Abstract: A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 Kg, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds.

Abstract: A method of forming a device is disclosed. The method includes providing a printed circuit board substrate having a die attach region on a first surface of the substrate. The method also includes attaching a die to a die attach region. The die is electrically coupled to first land pads disposed on the first surface at the periphery of the die attach region. A cap is formed in a target area by a top gate process to produce a cap with an even surface. The cap covers the die and leaves at least the first land pads exposed.

Abstract: A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.

Abstract: A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 Kg, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds.

Abstract: A plasma clean tool that includes a cleaning chamber for cleaning an article by plasma cleaning and a charge shield for surrounding an article to be cleaned is presented. The charge shield prevents charged components of plasma from passing therethrough to charge the article during plasma cleaning of the article.

Abstract: An integrated circuit package having a die pad and a plurality of leads is disclosed. At least one of the plurality of leads has a recess formed in a first face thereof. The package also has an integrated circuit chip coupled to the die pad through an adhesive layer. A plurality of wires each link a first face of the integrated circuit chip to one of the plurality of leads. An encapsulant encloses the integrated circuit chip, the plurality of wires, the die pad, and a portion of each of the plurality of leads. The encapsulant forms a plurality of side walls which slant downward and outward. At least one of the side walls intersects with the first face of the at least one lead within the side walls of the recess formed therein.

Abstract: An integrated circuit package having a die pad and a plurality of leads is disclosed. At least one of the plurality of leads has a recess formed in a first face thereof. The package also has an integrated circuit chip coupled to the die pad through an adhesive layer. A plurality of wires each link a first face of the integrated circuit chip to one of the plurality of leads. An encapsulant encloses the integrated circuit chip, the plurality of wires, the die pad, and a portion of each of the plurality of leads. The encapsulant forms a plurality of side walls which slant downward and outward. At least one of the side walls intersects with the first face of the at least one lead within the side walls of the recess formed therein.