Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A apparatus for detecting a high pressure condition within a high voltage vacuum device includes a microcircuit embedded within the vacuum containment that transmits a wireless signal upon detection of a high pressure condition and/or light generated by arcing between the electrical contacts of the high voltage device. The wireless signal can be transmitted via RF or optical means. The microcircuit is powered by energy sources produced within the vacuum device such as magnetic fields generated by current flow through the device, or light generated by arcing between the contacts. Alternatively, the microcircuit can be powered RF or optical signals transmitted to the microcircuit from outside the vacuum device.

Abstract: A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A apparatus for detecting a high pressure condition within a high voltage vacuum device includes a microcircuit embedded within the vacuum containment that transmits a wireless signal upon detection of a high pressure condition and/or light generated by arcing between the electrical contacts of the high voltage device. The wireless signal can be transmitted via RF or optical means. The microcircuit is powered by energy sources produced within the vacuum device such as magnetic fields generated by current flow through the device, or light generated by arcing between the contacts. Alternatively, the microcircuit can be powered RF or optical signals transmitted to the microcircuit from outside the vacuum device.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shaped reflector. The hemispherical reflector allows the source light fiber to oriented parallel to the detection light fiber, providing a more compact and efficient fiber routing.

Abstract: A vacuum-type electrical switching apparatus (10) for high voltage electrical power. A vacuum pressure condition in a vacuum pressure space (21) surrounding electrical contact points (18) is monitored and movement of the contact points between open and closed positions is automatically prevented when the pressure exceeds a predetermined threshold in order to avoid destructive arcing between the points. A sensor (32) provides a vacuum signal (34) responsive to the vacuum pressure condition. A controller (36) automatically inhibits movements of the contact points when the vacuum signal indicates that the vacuum has degraded. A contactor (38) may be placed in series with power supply (28) and a solenoid (24) used to move the contact points, with the contactor being automatically opened by the controller in response to the degraded vacuum condition.

Abstract: A method and apparatus for detecting a high pressure condition within an interrupter includes introducing high intensity ultrasonic sound into the outer wall of a vacuum interrupter through a sonic wave guide, then listening for the reflected and retransmitted response signals. The characteristics of the response signals are utilized to determine the pressure within the interrupter, and to determine when an unwanted high pressure condition exists.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shaped reflector. The hemispherical reflector allows the source light fiber to oriented parallel to the detection light fiber, providing a more compact and efficient fiber routing.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows or flexible diaphragm. The position at high pressures can be detected optically by the interruption or reflection of light beams, or electrically by sensing contact closure or deflection via strain gauges. Electrical sensing is provided by microcircuits that are operated at high voltage device potentials, transmitting pressure information via RF or optical signals.

Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window.

Abstract: A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.

Abstract: A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

Abstract: A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Abstract: A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique.