Abstract: A method for estimating a 3D map and a plurality of poses is described. The method includes non-recursively performing an initialization of the 3D map and the respective poses of the plurality of poses based on a plurality of first 2D images of the series of 2D images, and recursively performing sequential updating of the 3D map based on recursively updating the 3D map for respective ones of a plurality of second 2D images of the series of 2D images. Related systems, devices and computer program products are also described.

Abstract: A method for estimating a 3D map and a plurality of poses is described. The method includes non-recursively performing an initialization of the 3D map and the respective poses of the plurality of poses based on a plurality of first 2D images of the series of 2D images, and recursively performing sequential updating of the 3D map based on recursively updating the 3D map for respective ones of a plurality of second 2D images of the series of 2D images. Related systems, devices and computer program products are also described.

Abstract: An electronic system includes a circuitry configured to obtain a sequence of frames of an object under different viewing angles at consecutive time instances. For a first time instance, the circuitry generates a point cloud descriptive for an external surface of the object on basis of (i) a point cloud obtained for a second time instance preceding the first time instance and (ii) disparity information concerning a frame captured at the first time instance.

Abstract: An electronic system includes a circuitry configured to obtain a sequence of frames of an object under different viewing angles at consecutive time instances. For a first time instance, the circuitry generates a point cloud descriptive for an external surface of the object on basis of (i) a point cloud obtained for a second time instance preceding the first time instance and (ii) disparity information concerning a frame captured at the first time instance.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

Abstract: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (?). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (?). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.

Abstract: The present invention relates to a method for determining a matrix of transmission cross coefficients w for an optical modeling in an optical proximity correction of mask layouts. In a first step, there is calculation of Fourier transforms of an illumination aperture, a lens aperture and a complex conjugate lens aperture, which are present in the form of image matrices with a predetermined raster. A second step involves calculating Fourier transforms for the transmission cross coefficients w from the Fourier transforms by means of a convolution theorem in order to obtain the matrix of the Fourier transforms of the transmission cross coefficients w. A further step involves inverse-transforming the Fourier transforms of the transmission cross coefficients w by means of a fast Fourier transformation in order to obtain the matrix of the transmission cross coefficients w for the optical modeling in the optical proximity correction of mass layouts.

Abstract: Lithography mask for the lithographic patterning of a resist layer on a substrate having first regions, in which the lithography mask has a nontransparent layer, and second and third regions, which differ in terms of the optical thickness of the lithography mask and in which the lithography mask is at least semitransparent. The lithography mask comprises a first section having a plurality of second regions and a plurality of third regions, which are arranged alternately and surrounded by a first region, for the lithographic production of resist openings at distances which are less than a predetermined limit distance. Furthermore, the lithography mask comprises a second section having a multiplicity of third regions, each of which is surrounded by a second region surrounded by a multiply contiguous first region, for the lithographic production of resist openings at distances which are greater than a predetermined limit distance.

Abstract: A method for optimizing the geometry of structural elements of a circuit pattern involves providing an overall circuit pattern of the circuit design and a plurality of basic patterns. Subsequently, the circuit pattern of the circuit design is iteratively decomposed into corresponding basic patterns in order to classify those parts of the circuit pattern of the plurality of structural elements wherein there exists a match with the basic pattern. Subsequently, further basic patterns are determined for those parts of the circuit pattern which were not previously classified. After applying a specification for optimizing the geometry of the structural elements, the optimized basic patterns are inserted into the circuit design thus achieving an improvement of the optical imaging properties.

Abstract: The present invention relates to a method for determining a matrix of transmission cross coefficients w for an optical modeling in an optical proximity correction of mask layouts. In a first step, there is calculation of Fourier transforms of an illumination aperture, a lens aperture and a complex conjugate lens aperture, which are present in the form of image matrices with a predetermined raster. A second step involves calculating Fourier transforms for the transmission cross coefficients w from the Fourier transforms by means of a convolution theorem in order to obtain the matrix of the Fourier transforms of the transmission cross coefficients w. A further step involves inverse-transforming the Fourier transforms of the transmission cross coefficients w by means of a fast Fourier transformation in order to obtain the matrix of the transmission cross coefficients w for the optical modeling in the optical proximity correction of mass layouts.

Abstract: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (?). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (?). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer can include a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away with an enlargement of the process window during the exposure of the semiconductor wafer.