Abstract: Various examples include systems, apparatuses, and methods to perform an automated visual-inspection of components undergoing various stages of fabrication. In one example, an inspection system includes a number of robots, each having a camera, to inspect a component for defects at various stages of fabrication. Generally, each of the cameras is located at a different geographical location corresponding to the various stages in the fabrication of the component. At least some of the cameras are arranged to inspect all surfaces of the component that are not facing a table upon which the component is mounted. The system also includes a respective data-collection station electronically coupled to each the number of robots and an associated one of the cameras. A master data-collection station is electronically coupled to each of the data-collection stations. Other systems, apparatuses, and methods are disclosed.

Abstract: Various embodiments include reflective-mode Fourier ptychographic microscope (RFPM) apparatuses and methods for using the RFPM. In one example, the RFPM includes a multiple-component light source configured to direct radiation to a surface. The multiple-component light source has a number of individual-light sources, each of which is configured to be activated individually. The RFPM further includes collection optics to receive radiation reflected and scattered or otherwise redirected from the surface, and a sensor element to convert received light-energy from the collection optics into an electrical-signal output. Other apparatuses, designs, and methods are disclosed.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shaped reflector. The hemispherical reflector allows the source light fiber to oriented parallel to the detection light fiber, providing a more compact and efficient fiber routing.

Abstract: A method and apparatus for detecting a high pressure condition within an interrupter includes introducing high intensity ultrasonic sound into the outer wall of a vacuum interrupter through a sonic wave guide, then listening for the reflected and retransmitted response signals. The characteristics of the response signals are utilized to determine the pressure within the interrupter, and to determine when an unwanted high pressure condition exists.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shaped reflector. The hemispherical reflector allows the source light fiber to oriented parallel to the detection light fiber, providing a more compact and efficient fiber routing.

Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

Abstract: A vacuum-type electrical switching apparatus (10) for high voltage electrical power. A vacuum pressure condition in a vacuum pressure space (21) surrounding electrical contact points (18) is monitored and movement of the contact points between open and closed positions is automatically prevented when the pressure exceeds a predetermined threshold in order to avoid destructive arcing between the points. A sensor (32) provides a vacuum signal (34) responsive to the vacuum pressure condition. A controller (36) automatically inhibits movements of the contact points when the vacuum signal indicates that the vacuum has degraded. A contactor (38) may be placed in series with power supply (28) and a solenoid (24) used to move the contact points, with the contactor being automatically opened by the controller in response to the degraded vacuum condition.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window.

Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: Process and apparatus are disclosed for forming a layer of a stoichiometric metal compound on a semiconductor wafer by reactive sputtering a metal target in a chamber in the presence of a reactive gas, wherein the negative potential on a metal target is increased or decreased to change the supply of sputtered metal atoms available to react with the atoms of the reactive gas at a fixed flow of the gas by resetting the power level of a constant power source electrically connected to the target and a path is provided for the flow of reactive gas to the zone between the target and the wafer, while restricting the travel of the stoichiometric metal compound being formed from the zone to thereby provide a stoichiometric ratio of sputtered metal atoms and reactive gas atoms adjacent the wafer to form the stoichiometric metal compound on the wafer.