Abstract: A multiple connection socket assembly for operatively associating semiconductor device fabrication equipment with a plurality of external facilities. The multiple connection socket assembly includes a connective structure configured to substantially simultaneously connect at least two different external facilities selected from a power supply, a computer, a vacuum, a chemical source, a source of water vapor, a source of liquid water, a pressurized air source, a hydraulic fluid source, and a ventilation system. The connective structure itself may include interconnectable first and second members with corresponding connector elements disposed on the faces of each member.

Abstract: A multiple connection socket assembly for operatively associating semiconductor device fabrication equipment with a plurality of external facilities. The multiple connection socket assembly includes a connective structure configured to substantially simultaneously connect at least two different external facilities selected from a power supply, a computer, a vacuum, a chemical source, a source of water vapor, a source of liquid water, a pressurized air source, a hydraulic fluid source, and a ventilation system. The connective structure itself may include interconnectable first and second members with corresponding connector elements disposed on the faces of each member.

Abstract: A process for forming silicon dioxide, SiO.sub.2, or silicon nitride, Si.sub.3 N.sub.4, layers on selected substrates which includes reacting diethylsilane, C.sub.4 H.sub.12 Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.