Abstract: A tool holder for a gun-shaped power tool includes a base including a first slot and a second slot extending parallel to the first slot, a first support member adjustably securable along the first slot and along a first side of the base, and a second support member adjustably securable along the second slot and along the first side of the base. A tool bit and/or a barrel of the tool may be supported by surfaces of the support members when the tool is stored in the tool holder, so that a grip of the tool is readily accessible by a user. The power tool holder provides a structure for ergonomically positioning and storing a gun-shaped power tool, improving the ease and speed of access of the tool during assembly operations.

Abstract: A tool holder for a gun-shaped power tool includes a base including a first slot and a second slot extending parallel to the first slot, a first support member adjustably securable along the first slot and along a first side of the base, and a second support member adjustably securable along the second slot and along the first side of the base. A tool bit and/or a barrel of the tool may be supported by surfaces of the support members when the tool is stored in the tool holder, so that a grip of the tool is readily accessible by a user. The power tool holder provides a structure for ergonomically positioning and storing a gun-shaped power tool, improving the ease and speed of access of the tool during assembly operations.

Abstract: An adjustable photovoltaic panel mounting system that allows for variations in roofs and roof elements, while still maintaining a rigid and secure assembly. The specific location for supporting feet and structural elements of the mounting system may be varied to allow for variations in roof features and different panel configurations. The mounting mechanisms are adjustable in both a North/South and a East/West direction to provide for maximum layout flexibility.

Abstract: An oxide layer on an indium phosphide semiconductor substrate is doped with silicon. This enables epitaxial layers to be deposited upon the substrate in a conventional manner, including mesa etching and overgrowth, to form a semiconductor structure. The doped oxide layer is thought to reduce diffusion of phosphorus out of the substrate and thus to reduce the zinc levels in the active region of the structure. Additionally, or as an alternative, after mesa etching oxide can be formed on the mesa sides and then doped with silicon. Conventional blocking layers can then be formed over the doped oxide, reducing the diffusion of zinc from the blocking layers into the rest of the structure.

Abstract: An oxide layer on an indium phosphide semiconductor substrate is doped with silicon. This enables epitaxial layers to be deposited upon the substrate in a conventional manner, including mesa etching and overgrowth, to form a semiconductor structure. The doped oxide layer is thought to reduce diffusion of phosphorus out of the substrate and thus to reduce the zinc levels in the active region of the structure. Additionally, or as an alternative, after mesa etching oxide can be formed on the mesa sides and then doped with silicon. Conventional blocking layers can then be formed over the doped oxide, reducing the diffusion of zinc from the blocking layers into the rest of the structure.