Patents by Inventor Rodney S. Ridley, Sr.

Rodney S. Ridley, Sr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Superjunction structures for power devices and methods of manufacture
    Patent number: 8772868
    Abstract: A power device includes a semiconductor substrate having a plurality of alternately arranged pillars of first and second conductivity types. At least one of the plurality of pillars of second conductivity type includes a first trench epitaxial layer of the second conductivity type disposed on a trench sidewall of the second trench and a trench bottom surface of the second trench, a second trench epitaxial layer of the second conductivity type disposed on the first trench epitaxial layer of the second conductivity type, and an insulating material layer disposed on the second trench epitaxial layer of the second conductivity type.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: July 8, 2014
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Joseph A. Yedinak, Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Hamza Yilmaz, James Pan, Rodney S. Ridley, Sr.
  • Superjunction Structures for Power Devices and Methods of Manufacture
    Publication number: 20120273916
    Abstract: A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
    Type: Application
    Filed: April 27, 2011
    Publication date: November 1, 2012
    Inventors: Joseph A. Yedinak, Christopher L. Rexer, Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Jaegil Lee, Hamza Yilmaz, Chongman Yun, Dwayne S. Reichl, James Pan, Rodney S. Ridley, SR., Harold Heidenreich
  • Superjunction Structures for Power Devices and Methods of Manufacture
    Publication number: 20120273884
    Abstract: A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
    Type: Application
    Filed: April 27, 2011
    Publication date: November 1, 2012
    Inventors: Joseph A. Yedinak, Christopher L. Rexer, Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Jaegil Lee, Hamza Yilmaz, Chongman Yun, Dwayne S. Reichl, James Pan, Rodney S. Ridley, SR., Harold Heidenreich
  • Buried gate-field termination structure
    Patent number: 6818947
    Abstract: In a power semiconductor device 10, a continuous trench has an outer circumferential portion 58 that includes a field plate and inner portions 28 that carry include one or more gate runners 34 to that the gate runners and the field plate are integral with each other. The trench structure 58, 28 is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: November 16, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Thomas E. Grebs, Christopher B. Kocon, Rodney S. Ridley, Sr., Gary M. Dolny, Nathan Lawrence Kraft, Louise E. Skurkey